Broadband infrared study of pressure-tunable Fano resonance and metallization transition in 2H- $$\hbox MoTe}_2$$ MoTe 2
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
2045-2322
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
online resource.
- Bibliographic citation
-
Broadband infrared study of pressure-tunable Fano resonance and metallization transition in 2H- $$\hbox MoTe}_2$$ MoTe 2 ; volume:12 ; number:1 ; day:15 ; month:10 ; year:2022 ; pages:1-8 ; date:12.2022
Scientific reports ; 12, Heft 1 (15.10.2022), 1-8, 12.2022
- Creator
-
Stellino, E.
Capitani, F.
Ripanti, F.
Verseils, M.
Petrillo, C.
Dore, P.
Postorino, P.
- Contributor
-
SpringerLink (Online service)
- DOI
-
10.1038/s41598-022-22089-0
- URN
-
urn:nbn:de:101:1-2023010109102885683594
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
- 15.08.2025, 7:27 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Stellino, E.
- Capitani, F.
- Ripanti, F.
- Verseils, M.
- Petrillo, C.
- Dore, P.
- Postorino, P.
- SpringerLink (Online service)
Other Objects (12)
MoTE
Moiré‐Assisted Realization of Octahedral MoTe 2 Monolayer
Fast High‐Responsivity Few‐Layer MoTe 2 Photodetectors
Atomic‐Scale Oxygen‐Mediated Etching of 2D MoS 2 and MoTe 2
Deterministic Polymorphic Engineering of MoTe 2 for Photonic and Optoelectronic Applications
Strain‐Engineered Level Alignment in the MoTe 2/WSe 2 Heterobilayer
Strain Engineering for Enhancing Carrier Mobility in MoTe 2 Field‐Effect Transistors
Mote.
Large‐Scale p ‐Type Nonvolatile FGFET Memory Array Based on 2H‐MoTe 2
Ultrasensitive Near‐Infrared MoTe 2 Photodetectors with Monolithically Integrated Fresnel Zone Plate Metalens
Room‐Temperature Nanoseconds Spin Relaxation in WTe 2 and MoTe 2 Thin Films
Infrared Photodetector Based on van der Waals MoS 2/MoTe 2 Hetero‐Bilayer Modulated by Photogating
MoTE
Moiré‐Assisted Realization of Octahedral MoTe 2 Monolayer
Fast High‐Responsivity Few‐Layer MoTe 2 Photodetectors
Atomic‐Scale Oxygen‐Mediated Etching of 2D MoS 2 and MoTe 2
Deterministic Polymorphic Engineering of MoTe 2 for Photonic and Optoelectronic Applications
Strain‐Engineered Level Alignment in the MoTe 2/WSe 2 Heterobilayer
Strain Engineering for Enhancing Carrier Mobility in MoTe 2 Field‐Effect Transistors
Mote.
Large‐Scale p ‐Type Nonvolatile FGFET Memory Array Based on 2H‐MoTe 2
Ultrasensitive Near‐Infrared MoTe 2 Photodetectors with Monolithically Integrated Fresnel Zone Plate Metalens
Room‐Temperature Nanoseconds Spin Relaxation in WTe 2 and MoTe 2 Thin Films
Infrared Photodetector Based on van der Waals MoS 2/MoTe 2 Hetero‐Bilayer Modulated by Photogating
MoTE
Moiré‐Assisted Realization of Octahedral MoTe 2 Monolayer
Fast High‐Responsivity Few‐Layer MoTe 2 Photodetectors
Atomic‐Scale Oxygen‐Mediated Etching of 2D MoS 2 and MoTe 2
Deterministic Polymorphic Engineering of MoTe 2 for Photonic and Optoelectronic Applications
Strain‐Engineered Level Alignment in the MoTe 2/WSe 2 Heterobilayer
Strain Engineering for Enhancing Carrier Mobility in MoTe 2 Field‐Effect Transistors
Mote.
Large‐Scale p ‐Type Nonvolatile FGFET Memory Array Based on 2H‐MoTe 2
Ultrasensitive Near‐Infrared MoTe 2 Photodetectors with Monolithically Integrated Fresnel Zone Plate Metalens
Room‐Temperature Nanoseconds Spin Relaxation in WTe 2 and MoTe 2 Thin Films