Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers ; volume:12 ; number:1 ; day:11 ; month:4 ; year:2017 ; pages:1-5 ; date:12.2017
Nanoscale research letters ; 12, Heft 1 (11.4.2017), 1-5, 12.2017
- Classification
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Physik
- Creator
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Zheng, Meijuan
- Contributor
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Zhang, Guozhen
Wang, Xiao
Wan, Jiaxian
Wu, Hao
Liu, Chang
SpringerLink (Online service)
- DOI
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10.1186/s11671-017-2024-x
- URN
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urn:nbn:de:1111-201704278164
- Rights
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:49 AM CEST
Data provider
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Associated
- Zheng, Meijuan
- Zhang, Guozhen
- Wang, Xiao
- Wan, Jiaxian
- Wu, Hao
- Liu, Chang
- SpringerLink (Online service)
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