Temperature‐Dependent Charge Carrier Diffusion in (000 1 ¯) Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Temperature‐Dependent Charge Carrier Diffusion in (000 1 ¯) Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells ; volume:257 ; number:6 ; year:2020 ; extent:7
Physica status solidi / B. B, Basic solid state physics ; 257, Heft 6 (2020) (gesamt 7)
- Urheber
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Netzel, Carsten
Hoffmann, Veit
Tomm, Jens W.
Mahler, Felix
Einfeldt, Sven
Weyers, Markus
- DOI
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10.1002/pssb.202000016
- URN
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urn:nbn:de:101:1-2022070612061262149388
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:23 MESZ
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Beteiligte
- Netzel, Carsten
- Hoffmann, Veit
- Tomm, Jens W.
- Mahler, Felix
- Einfeldt, Sven
- Weyers, Markus
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