Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
2041-1723
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer ; volume:13 ; number:1 ; day:6 ; month:8 ; year:2022 ; pages:1-9 ; date:12.2022
Nature Communications ; 13, Heft 1 (6.8.2022), 1-9, 12.2022

Creator
Li, Yuan
Zhang, Zhi Cheng
Li, Jiaqiang
Chen, Xu-Dong
Kong, Ya
Wang, Fu-Dong
Zhang, Guo-Xin
Lu, Tong-Bu
Zhang, Jin
Contributor
SpringerLink (Online service)

DOI
10.1038/s41467-022-32380-3
URN
urn:nbn:de:101:1-2022102121423811223759
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:34 AM CEST

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Associated

  • Li, Yuan
  • Zhang, Zhi Cheng
  • Li, Jiaqiang
  • Chen, Xu-Dong
  • Kong, Ya
  • Wang, Fu-Dong
  • Zhang, Guo-Xin
  • Lu, Tong-Bu
  • Zhang, Jin
  • SpringerLink (Online service)

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