Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2041-1723
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer ; volume:13 ; number:1 ; day:6 ; month:8 ; year:2022 ; pages:1-9 ; date:12.2022
Nature Communications ; 13, Heft 1 (6.8.2022), 1-9, 12.2022
- Creator
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Li, Yuan
Zhang, Zhi Cheng
Li, Jiaqiang
Chen, Xu-Dong
Kong, Ya
Wang, Fu-Dong
Zhang, Guo-Xin
Lu, Tong-Bu
Zhang, Jin
- Contributor
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SpringerLink (Online service)
- DOI
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10.1038/s41467-022-32380-3
- URN
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urn:nbn:de:101:1-2022102121423811223759
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:34 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Li, Yuan
- Zhang, Zhi Cheng
- Li, Jiaqiang
- Chen, Xu-Dong
- Kong, Ya
- Wang, Fu-Dong
- Zhang, Guo-Xin
- Lu, Tong-Bu
- Zhang, Jin
- SpringerLink (Online service)