A 28 GHz Superregenerative Amplifier for FMCW Radar Reflector Applications in 45 nm SOI CMOS
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
In: 2018 Asia-Pacific Microwave Conference (APMC). Kyoto, Japan, 6-9 Nov. 2018
In: Asia-Pacific Microwave Conference Proceedings, Erscheinungsort: Kyoto, Japan, Verlag: Institute of Electrical and Electronics Engineers (IEEE), Erscheinungsjahr: 2018, Seiten: 630-632, ISBN: 978-1-5386-2184-4, DOI: 10.23919/APMC.2018.8617536
- Classification
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Elektrotechnik, Elektronik
- Event
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Veröffentlichung
- (where)
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Dresden
- (who)
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Technische Universität Dresden
- (when)
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2019
- Creator
-
Thayyil, Manu Viswambharan
Ghaleb, Hatem
Joram, Niko
Ellinger, Frank
- URN
-
urn:nbn:de:bsz:14-qucosa2-351281
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:54 PM CET
Data provider
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Associated
- Thayyil, Manu Viswambharan
- Ghaleb, Hatem
- Joram, Niko
- Ellinger, Frank
- Technische Universität Dresden
Time of origin
- 2019
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60- and 122-GHz SiGe BiCMOS transceivers for FMCW radar applications
RapidIP — Automated design of a 220–260 GHz power amplifier in a 130 nm BiCMOS technology
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Verspannungstechniken zur Leistungssteigerung von SOI-CMOS-Transistoren
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A 5.5–7.5‐GHz band‐configurable wake‐up receiver fully integrated in 45‐nm RF‐SOI CMOS
Metastability in digital circuits with emphasis on CMOS technology amplifier
Theory and monolithic CMOS integration of a differential difference amplifier
A compact low-power SiGe:C BiCMOS amplifier for 77 - 81 GHz automotive radar
Design of CMOS circuits for a 24 GHz FMCW radar receiver
Integrated 10-GHz Graphene FET Amplifier
79 GHz fully integrated fully differential Si/SiGe HBT amplifier for automotive radar applications
60- and 122-GHz SiGe BiCMOS transceivers for FMCW radar applications
RapidIP — Automated design of a 220–260 GHz power amplifier in a 130 nm BiCMOS technology
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Verspannungstechniken zur Leistungssteigerung von SOI-CMOS-Transistoren
Verspannungstechniken zur Leistungssteigerung von SOI-CMOS-Transistoren
A 5.5–7.5‐GHz band‐configurable wake‐up receiver fully integrated in 45‐nm RF‐SOI CMOS
Metastability in digital circuits with emphasis on CMOS technology amplifier