Reversible Polarity Control in 2D MoTe 2 Field‐Effect Transistors for Complementary Logic Gate Applications
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Reversible Polarity Control in 2D MoTe 2 Field‐Effect Transistors for Complementary Logic Gate Applications ; day:15 ; month:05 ; year:2024 ; extent:9
Advanced functional materials ; (15.05.2024) (gesamt 9)
- Urheber
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Yu, Byoung‐Soo
Kim, Wonsik
Jang, Jisu
Lee, Je‐Jun
Hong, Jung Pyo
Kwon, Namhee
Kim, Seunghwan
Ha, Aelim
Kim, Hong‐Kyu
Ahn, Jae‐Pyoung
Jeong, Kwangsik
Taniguchi, Takashi
Watanabe, Kenji
Wang, Gunuk
Ahn, Jongtae
Park, Soohyung
Hwang, Do Kyung
- DOI
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10.1002/adfm.202404129
- URN
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urn:nbn:de:101:1-2405161411500.534107634899
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 10:51 MESZ
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Beteiligte
- Yu, Byoung‐Soo
- Kim, Wonsik
- Jang, Jisu
- Lee, Je‐Jun
- Hong, Jung Pyo
- Kwon, Namhee
- Kim, Seunghwan
- Ha, Aelim
- Kim, Hong‐Kyu
- Ahn, Jae‐Pyoung
- Jeong, Kwangsik
- Taniguchi, Takashi
- Watanabe, Kenji
- Wang, Gunuk
- Ahn, Jongtae
- Park, Soohyung
- Hwang, Do Kyung
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