Balancing the Switching Losses of Paralleled SiC MOSFETs Using an Intelligent Gate Driver

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Notes: In: Berlin : VDE Verlag GmbH, 2020, Seiten/Artikel-Nr:164-170

Classification: Elektrotechnik, Elektronik

Event: Veröffentlichung

(where): Aachen

(who): Universitätsbibliothek der RWTH Aachen

(when): 2020

Creator: Lüdecke, Christoph
Krichel, Finn
Laumen, Michael
De Doncker, Rik W.

DOI: 10.18154/RWTH-2020-06376

URN: urn:nbn:de:101:1-2023072901322977324545

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 25.03.2025, 1:53 PM CET

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Associated

Lüdecke, Christoph
Krichel, Finn
Laumen, Michael
De Doncker, Rik W.
Universitätsbibliothek der RWTH Aachen

Time of origin

2020

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Balancing the Switching Losses of Paralleled SiC MOSFETs Using an Intelligent Gate Driver

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Other Objects (12)

Balancing the Switching Losses of Paralleled SiC MOSFETs Using a Stepwise Gate Driver

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Junction-Temperature Sensing of Paralleled SiC MOSFETs Utilizing Temperature Sensitive Optical Parameters

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Reducing device stress and switching losses using active gate drivers and improved switching cell design

Gate driver integrated closed-loop control for electromagnetic emissions and switching losses of wide bandgap power electronic converters

Compensating asymmetries of parallel-connected SiC MOSFETs using intelligent gate drivers

Junction-Temperature Sensing of Paralleled SiC MOSFETs Utilizing Temperature Sensitive Optical Parameters

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Lecture notes power electronics , [...]. Fundamentals, topologies, analysis

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Optimized IGBT Turn-On Switching Performance Using the Full Device Safe Operating Area

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