Deep-potential enabled multiscale simulation of gallium nitride devices on boron arsenide cooling substrates
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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1 Online-Ressource.
- Sprache
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Englisch
- Erschienen in
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Deep-potential enabled multiscale simulation of gallium nitride devices on boron arsenide cooling substrates ; volume:15 ; number:1 ; day:25 ; month:3 ; year:2024 ; pages:1-9 ; date:12.2024
Nature Communications ; 15, Heft 1 (25.3.2024), 1-9, 12.2024
- Urheber
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1038/s41467-024-46806-7
- URN
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urn:nbn:de:101:1-2406292136105.172457938984
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 08:13 MESZ
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Beteiligte
- Wu, Jing
- Zhou, E.
- Huang, An
- Zhang, Hongbin
- Hu, Ming
- Qin, Guangzhao
- SpringerLink (Online service)
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