Hochschulschrift
Design von GaN Transistoren für leistungselektronische Anwendungen
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783736974135
3736974132
- Maße
-
21 cm
- Umfang
-
XII, 155 Seiten
- Ausgabe
-
1. Auflage
- Sprache
-
Deutsch
- Anmerkungen
-
Illustrationen, Diagramme
Technische Universität Berlin, Dissertation, 2020
- Erschienen in
-
Innovationen mit Mikrowellen und Licht ; Band 65
- Klassifikation
-
Elektrotechnik, Elektronik
- Schlagwort
-
HEMT
Galliumnitrid
Epitaxie
Leckstrom
Durchschlagfestigkeit
Elektrische Eigenschaft
Thermodynamische Eigenschaft
Schaltungsentwurf
Leistungselektronik
Schalttransistor
- Ereignis
-
Veröffentlichung
- (wo)
-
Göttingen
- (wer)
-
Cuvillier Verlag
- (wann)
-
2021
- Urheber
- Beteiligte Personen und Organisationen
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.03.2025, 11:43 MEZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Objekttyp
- Hochschulschrift
Beteiligte
- Zhytnytska, Rimma
- Eric Cuvillier. Firma
- Cuvillier Verlag
Entstanden
- 2021
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