- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
2309-4710
- Extent
-
Online-Ressource
- Language
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Englisch
- Notes
-
online resource.
- Bibliographic citation
-
Understanding the Mott insulating state in 1T-TaS2 and 1T-TaSe2 ; volume:32 ; number:1 ; day:19 ; month:7 ; year:2022 ; pages:1-17 ; date:12.2022
AAPPS bulletin / Association of Asia Pacific Physical Societies ; 32, Heft 1 (19.7.2022), 1-17, 12.2022
- Creator
-
Fei, Ying
Wu, Zongxiu
Zhang, Wenhao
Yin, Yi
- Contributor
-
SpringerLink (Online service)
- DOI
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10.1007/s43673-022-00049-0
- URN
-
urn:nbn:de:101:1-2022091501593970266333
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:29 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Fei, Ying
- Wu, Zongxiu
- Zhang, Wenhao
- Yin, Yi
- SpringerLink (Online service)
Other Objects (12)
Oberflächen-Phasenübergänge in den Ladungsdichtewelle-Systemen 1T-TaSe2 und 1T-TiSe2
Stacking and spin order in a van der Waals Mott insulator 1T-TaS2
Dualistic insulator states in 1T-TaS2 crystals
Elektronische und strukturelle Phasenübergänge in den stark korrelierten Systemen 1T-TaSe2 und 1T′-TaTe2 sowie der Entwicklung einer Experimentierstation zur in operando Spektroskopie der Plasma-Festkörper-Grenzfläche
Correlated electronic states at domain walls of a Mott-charge-density-wave insulator 1T-TaS2
Quantum spin liquid signatures in monolayer 1T-NbSe2
1t-Hammer
Structural Dynamics in the Charge Density Wave Compound 1T-TaS2
Electronic transport in suspended rhombohedral few-layer graphene and 1T-TaS2
Influence of structural defects on charge density waves in 1T-TaS2
Proximity induced charge density wave in a graphene/1T-TaS2 heterostructure
Versetten; cemb; 1t
Oberflächen-Phasenübergänge in den Ladungsdichtewelle-Systemen 1T-TaSe2 und 1T-TiSe2
Stacking and spin order in a van der Waals Mott insulator 1T-TaS2
Dualistic insulator states in 1T-TaS2 crystals
Elektronische und strukturelle Phasenübergänge in den stark korrelierten Systemen 1T-TaSe2 und 1T′-TaTe2 sowie der Entwicklung einer Experimentierstation zur in operando Spektroskopie der Plasma-Festkörper-Grenzfläche
Correlated electronic states at domain walls of a Mott-charge-density-wave insulator 1T-TaS2
Quantum spin liquid signatures in monolayer 1T-NbSe2
1t-Hammer
Structural Dynamics in the Charge Density Wave Compound 1T-TaS2
Electronic transport in suspended rhombohedral few-layer graphene and 1T-TaS2
Influence of structural defects on charge density waves in 1T-TaS2
Proximity induced charge density wave in a graphene/1T-TaS2 heterostructure
Versetten; cemb; 1t
Oberflächen-Phasenübergänge in den Ladungsdichtewelle-Systemen 1T-TaSe2 und 1T-TiSe2
Stacking and spin order in a van der Waals Mott insulator 1T-TaS2
Dualistic insulator states in 1T-TaS2 crystals
Elektronische und strukturelle Phasenübergänge in den stark korrelierten Systemen 1T-TaSe2 und 1T′-TaTe2 sowie der Entwicklung einer Experimentierstation zur in operando Spektroskopie der Plasma-Festkörper-Grenzfläche
Correlated electronic states at domain walls of a Mott-charge-density-wave insulator 1T-TaS2
Quantum spin liquid signatures in monolayer 1T-NbSe2
1t-Hammer
Structural Dynamics in the Charge Density Wave Compound 1T-TaS2
Electronic transport in suspended rhombohedral few-layer graphene and 1T-TaS2
Influence of structural defects on charge density waves in 1T-TaS2
Proximity induced charge density wave in a graphene/1T-TaS2 heterostructure