Exploring hafnium oxide's potential for passivating contacts for silicon solar cells
Abstract: We investigate the potential of ultra-thin HfO2 films grown by atomic layer deposition for passivating contacts to silicon focusing on variations in film thickness and post-deposition annealing temperature. A peak in passivation quality – as assessed by carrier lifetime measurements – is reported for 2.2 nm thick films annealed at 475 °C, for which a surface recombination velocity <1 cm/s is determined. For films <2.2 nm thick, there is a marked decrease in passivation quality. X-ray diffraction highlights a change from crystallised monoclinic to amorphous HfO2 as film thickness decreases from 12 nm to 2.2 nm. Kelvin probe results indicate that as-deposited 2.2–12 nm films have similar effective work functions, although the work function of 1 nm films is considerably lower. Upon post-deposition annealing in vacuum, all films exhibit a reduction in effective work function at temperatures coincident with the onset of passivation in air-annealed samples. An initial investigation into the contact resistivity in a passivating contact structure utilizing HfO2 reveals a strong post-deposition annealing temperature dependence, with the lowest resistance achieved below 375 °C, followed by a decrease in performance as temperature increases towards the optimal temperature for passivation (475 °C). Limitations of the contact structure used are discussed
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
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Solar energy materials & solar cells. - 259 (2023) , 112457, ISSN: 1879-3398
- Klassifikation
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Elektrotechnik, Elektronik
- Ereignis
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Veröffentlichung
- (wo)
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Freiburg
- (wer)
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Universität
- (wann)
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2024
- Urheber
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Wratten, Ailish
Pain, Sophie L.
Yadav, Anup
Khorani, Edris
Niewelt, Tim
Black, Lachlan E.
Bartholazzi, Gabriel
Walker, David Johannes
Grant, N.E
Murphy, John D.
- DOI
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10.1016/j.solmat.2023.112457
- URN
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urn:nbn:de:bsz:25-freidok-2541388
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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25.03.2025, 13:54 MEZ
Datenpartner
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Wratten, Ailish
- Pain, Sophie L.
- Yadav, Anup
- Khorani, Edris
- Niewelt, Tim
- Black, Lachlan E.
- Bartholazzi, Gabriel
- Walker, David Johannes
- Grant, N.E
- Murphy, John D.
- Universität
Entstanden
- 2024
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