A 3-in-1 doping process for interdigitated back contact solar cells exploiting the understanding of co-diffused dopant profiles by use of PECVD borosilicate glass in a phosphorus diffusion
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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In: Progress in Photovoltaics : Research and Applications ; 24 (2016), 7. - S. 955-967. - ISSN 1062-7995. - eISSN 1099-159X
- Classification
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Physik
- Event
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Veröffentlichung
- (where)
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Konstanz
- (who)
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Bibliothek der Universität Konstanz
- (when)
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2016
- Creator
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Gloger, Sebastian
Herguth, Axel
Engelhardt, Josh
Hahn, Giso
Terheiden, Barbara
- URN
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urn:nbn:de:bsz:352-0-327205
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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25.03.2025, 1:43 PM CET
Data provider
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Associated
- Gloger, Sebastian
- Herguth, Axel
- Engelhardt, Josh
- Hahn, Giso
- Terheiden, Barbara
- Bibliothek der Universität Konstanz
Time of origin
- 2016
Other Objects (12)
New Method for Determination of Electrically Inactive Phosphorus in n-type Emitters
Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells
Multifunctional ICP-PECVD Silicon Nitride Layers for High-efficiency Silicon Solar Cell Applications
Passivation of Si wafers by Al2O3 films with different surface conditioning
Role of thermal SiO<sub>2</sub> on passivation of highly doped layer
Investigation of radiation damage to the Al2O3
Compensation of the sputter damage during a-Si deposition for poly-Si/SiO<sub>x</sub> passivating contacts by ex-situ p-doping
Entwicklung und Charakterisierung neuartiger Hochleistungssolarzellen
P+ Doping Analysis of Laser Fired Contacts by Raman Spectroscopy
Etch-back of p+ structures for selective boron emitters in n-type c-Si solar cells
Design considerations for industrial rear passivated solar cells
Void formation on PERC solar cells and their impact on the electrical cell parameters verified by luminescence and scanning acoustic microscope measurements
New Method for Determination of Electrically Inactive Phosphorus in n-type Emitters
Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells
Multifunctional ICP-PECVD Silicon Nitride Layers for High-efficiency Silicon Solar Cell Applications
Passivation of Si wafers by Al2O3 films with different surface conditioning
Role of thermal SiO<sub>2</sub> on passivation of highly doped layer
Investigation of radiation damage to the Al2O3
Compensation of the sputter damage during a-Si deposition for poly-Si/SiO<sub>x</sub> passivating contacts by ex-situ p-doping
Entwicklung und Charakterisierung neuartiger Hochleistungssolarzellen
P+ Doping Analysis of Laser Fired Contacts by Raman Spectroscopy
Etch-back of p+ structures for selective boron emitters in n-type c-Si solar cells
Design considerations for industrial rear passivated solar cells
Void formation on PERC solar cells and their impact on the electrical cell parameters verified by luminescence and scanning acoustic microscope measurements
New Method for Determination of Electrically Inactive Phosphorus in n-type Emitters
Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells
Multifunctional ICP-PECVD Silicon Nitride Layers for High-efficiency Silicon Solar Cell Applications
Passivation of Si wafers by Al2O3 films with different surface conditioning
Role of thermal SiO<sub>2</sub> on passivation of highly doped layer
Investigation of radiation damage to the Al2O3
Compensation of the sputter damage during a-Si deposition for poly-Si/SiO<sub>x</sub> passivating contacts by ex-situ p-doping
Entwicklung und Charakterisierung neuartiger Hochleistungssolarzellen
P+ Doping Analysis of Laser Fired Contacts by Raman Spectroscopy
Etch-back of p+ structures for selective boron emitters in n-type c-Si solar cells
Design considerations for industrial rear passivated solar cells