1/f Noise Characterization of Bilayer MoS 2 Field‐Effect Transistors on Paper with Inkjet‐Printed Contacts and hBN Dielectrics
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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1/f Noise Characterization of Bilayer MoS 2 Field‐Effect Transistors on Paper with Inkjet‐Printed Contacts and hBN Dielectrics ; day:29 ; month:05 ; year:2021 ; extent:8
Advanced electronic materials ; (29.05.2021) (gesamt 8)
- Urheber
-
Pimpolari, Lorenzo
Calabrese, Gabriele
Conti, Silvia
Worsley, Robyn
Majee, Subimal
Polyushkin, Dmitry K.
Paur, Matthias
Casiraghi, Cinzia
Müller, Thomas
Iannaccone, Giuseppe
Macucci, Massimo
Fiori, Gianluca
- DOI
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10.1002/aelm.202100283
- URN
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urn:nbn:de:101:1-2021052915223756351710
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 10:55 MESZ
Datenpartner
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Beteiligte
- Pimpolari, Lorenzo
- Calabrese, Gabriele
- Conti, Silvia
- Worsley, Robyn
- Majee, Subimal
- Polyushkin, Dmitry K.
- Paur, Matthias
- Casiraghi, Cinzia
- Müller, Thomas
- Iannaccone, Giuseppe
- Macucci, Massimo
- Fiori, Gianluca
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