Efficient Ohmic Contact in Monolayer CrX 2 N 4 (X = C, Si) Based Field‐Effect Transistors (Adv. Electron. Mater. 3/2023)
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Efficient Ohmic Contact in Monolayer CrX 2 N 4 (X = C, Si) Based Field‐Effect Transistors (Adv. Electron. Mater. 3/2023) ; volume:9 ; number:3 ; year:2023 ; extent:1
Advanced electronic materials ; 9, Heft 3 (2023) (gesamt 1)
- Creator
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Shu, Yu
Liu, Yongqian
Cui, Zhou
Xiong, Rui
Zhang, Yinggan
Xu, Chao
Zheng, Jingying
Wen, Cuilian
Wu, Bo
Sa, Baisheng
- DOI
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10.1002/aelm.202370013
- URN
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urn:nbn:de:101:1-2023031114154813639377
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:53 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Shu, Yu
- Liu, Yongqian
- Cui, Zhou
- Xiong, Rui
- Zhang, Yinggan
- Xu, Chao
- Zheng, Jingying
- Wen, Cuilian
- Wu, Bo
- Sa, Baisheng