Efficient Ohmic Contact in Monolayer CrX 2 N 4 (X = C, Si) Based Field‐Effect Transistors (Adv. Electron. Mater. 3/2023)

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
Efficient Ohmic Contact in Monolayer CrX 2 N 4 (X = C, Si) Based Field‐Effect Transistors (Adv. Electron. Mater. 3/2023) ; volume:9 ; number:3 ; year:2023 ; extent:1
Advanced electronic materials ; 9, Heft 3 (2023) (gesamt 1)

Creator
Shu, Yu
Liu, Yongqian
Cui, Zhou
Xiong, Rui
Zhang, Yinggan
Xu, Chao
Zheng, Jingying
Wen, Cuilian
Wu, Bo
Sa, Baisheng

DOI
10.1002/aelm.202370013
URN
urn:nbn:de:101:1-2023031114154813639377
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:53 AM CEST

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Associated

  • Shu, Yu
  • Liu, Yongqian
  • Cui, Zhou
  • Xiong, Rui
  • Zhang, Yinggan
  • Xu, Chao
  • Zheng, Jingying
  • Wen, Cuilian
  • Wu, Bo
  • Sa, Baisheng

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