Promoted Hole Transport Capability by Improving Lateral Current Spreading for High‐Efficiency Quantum Dot Light‐Emitting Diodes
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Promoted Hole Transport Capability by Improving Lateral Current Spreading for High‐Efficiency Quantum Dot Light‐Emitting Diodes ; volume:7 ; number:23 ; year:2020 ; extent:7
Advanced science ; 7, Heft 23 (2020) (gesamt 7)
- Creator
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Wu, Qianqian
Cao, Fan
Wang, Haoran
Kou, Jianquan
Zhang, Zi‐Hui
Yang, Xuyong
- DOI
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10.1002/advs.202001760
- URN
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urn:nbn:de:101:1-2022062312583063892822
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:21 AM CEST
Data provider
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Associated
- Wu, Qianqian
- Cao, Fan
- Wang, Haoran
- Kou, Jianquan
- Zhang, Zi‐Hui
- Yang, Xuyong
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