Temporary Surface Passivation for Characterisation of Bulk Defects in Silicon: A Review
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
-
Englisch
- Erschienen in
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Temporary Surface Passivation for Characterisation of Bulk Defects in Silicon: A Review ; volume:11 ; number:11 ; year:2017 ; extent:18
Physica status solidi / Rapid research letters. Rapid research letters ; 11, Heft 11 (2017) (gesamt 18)
- Urheber
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Grant, Nicholas E.
Murphy, John D.
- DOI
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10.1002/pssr.201700243
- URN
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urn:nbn:de:101:1-2022093008422658348671
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
- 15.08.2025, 07:30 MESZ
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Beteiligte
- Grant, Nicholas E.
- Murphy, John D.
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