Bulk passivation in silicon ribbons : a lifetime study for an enhanced high efficiency process
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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In: Conference record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 : Coronado Springs Resort, Lake Buena Vista, FL, January 3 - 7, 2005. - Piscataway, NJ : IEEE Operations Center, 2005. - S. 923-926. - ISSN 0160-8371. - ISBN 0-7803-8707-4
In: 31st IEEE PVSC, 3. Jan 2005 - 7. Jan 2005, Lake Buena Vista
- Classification
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Physik
- Event
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Veröffentlichung
- (where)
-
Konstanz
- (who)
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Bibliothek der Universität Konstanz
- (when)
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2005
- Creator
- URN
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urn:nbn:de:bsz:352-2-t6n538yx0q3b4
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:44 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Kaes, Martin
- Hahn, Giso
- Metz, Axel
- Bibliothek der Universität Konstanz
Time of origin
- 2005
Other Objects (12)
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Investigation of the back side passivation layer of screen printed bifacial silicon solar cells
Comparison of the passivation quality of boron and aluminum BSF for wafers of varying thickness
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Evaluation of processing steps regarding lifetime of iron/copper contaminated mc Si wafers
Bulk and Surface-Related Degradation in Lifetime Samples Made of Czochralski Silicon Passivated by Plasma-Enhanced Chemical Vapor Deposited Layer Stacks
Enhanced stability of passivation quality on diffused silicon surfaces under light-induced degradation conditions
Injection resolved spatial lifetime mapping using photoluminescence
Temperature and Light-Induced Changes in Bulk and Passivation Quality of Boron-Doped Float-Zone Silicon Coated With SiN<sub>x</sub>:H
Status of selective emitter technology
Investigations of high refractive silicon nitride layers for etched back emitters : enhanced surface passivation for selective emitter concept (SECT)
Bulk hydrogenation in mc-Si by PECVD SiNx deposition only
Plasma texturing and its influence on surface passivation
Investigation of the back side passivation layer of screen printed bifacial silicon solar cells
Comparison of the passivation quality of boron and aluminum BSF for wafers of varying thickness
Al2O3 rear surface passivation for silicon ribbon solar cells
Evaluation of processing steps regarding lifetime of iron/copper contaminated mc Si wafers
Bulk and Surface-Related Degradation in Lifetime Samples Made of Czochralski Silicon Passivated by Plasma-Enhanced Chemical Vapor Deposited Layer Stacks
Enhanced stability of passivation quality on diffused silicon surfaces under light-induced degradation conditions
Injection resolved spatial lifetime mapping using photoluminescence
Temperature and Light-Induced Changes in Bulk and Passivation Quality of Boron-Doped Float-Zone Silicon Coated With SiN<sub>x</sub>:H
Status of selective emitter technology
Investigations of high refractive silicon nitride layers for etched back emitters : enhanced surface passivation for selective emitter concept (SECT)
Bulk hydrogenation in mc-Si by PECVD SiNx deposition only
Plasma texturing and its influence on surface passivation
Investigation of the back side passivation layer of screen printed bifacial silicon solar cells
Comparison of the passivation quality of boron and aluminum BSF for wafers of varying thickness
Al2O3 rear surface passivation for silicon ribbon solar cells