Preferentially oriented growth of diamond films on silicon with nickel interlayer

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 2523-3971

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Preferentially oriented growth of diamond films on silicon with nickel interlayer ; volume:4 ; number:8 ; day:15 ; month:7 ; year:2022 ; pages:1-16 ; date:8.2022
SN applied sciences ; 4, Heft 8 (15.7.2022), 1-16, 8.2022

Creator: K.C., Anupam
Siddique, Anwar
Anderson, Jonathan
Saha, Rony
Gautam, Chhabindra
Ayala, Anival
Engdahl, Chris
Holtz, Mark W.
Piner, Edwin L.

Contributor: SpringerLink (Online service)

DOI: 10.1007/s42452-022-05092-y

URN: urn:nbn:de:101:1-2022092107052381389786

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:35 AM CEST

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K.C., Anupam
Siddique, Anwar
Anderson, Jonathan
Saha, Rony
Gautam, Chhabindra
Ayala, Anival
Engdahl, Chris
Holtz, Mark W.
Piner, Edwin L.
SpringerLink (Online service)

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Preferentially oriented growth of diamond films on silicon with nickel interlayer

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Other Objects (12)

Interlayer Affected Diamond Electrochemistry

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Superconducting Diamond on Silicon Nitride for Device Applications

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