Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: In: Journal of Applied Physics (113:20) - Melville, NY : American Institute of Physics (AIP) - Art.-Id. 203513

Event: Veröffentlichung

(where): Berlin

(who): Technische Universität Berlin

(when): 2020

Creator: Gogova, Daniela
Petrov, P. P.
Bügler, Max
Wagner, Markus R.
Nenstiel, Christian
Callsen, Gordon
Schmidbauer, Martin
Kucharski, R.
Zajac, M.
Dwilinski, R.
Phillips, M. R.
Hoffmann, Axel
Fornari, Roberto

DOI: 10.14279/depositonce-9748

Handle: 11303/10853

URN: urn:nbn:de:101:1-2020030401100931305786

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 11:03 AM CEST

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Associated

Gogova, Daniela
Petrov, P. P.
Bügler, Max
Wagner, Markus R.
Nenstiel, Christian
Callsen, Gordon
Schmidbauer, Martin
Kucharski, R.
Zajac, M.
Dwilinski, R.
Phillips, M. R.
Hoffmann, Axel
Fornari, Roberto
Technische Universität Berlin

Time of origin

2020

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Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method

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Other Objects (12)

Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN

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(Al,Ga,In)N heterostructures grown along polar and non-polar directions by plasma-assisted molecular beam epitaxy

(Al,Ga,In)N heterostructures grown along polar and non-polar directions by plasma-assisted molecular beam epitaxy

Structure and composition of non‐polar (11‐20) InGaN nanorings grown by modified droplet epitaxy

Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire

High‐temperature performance of non‐polar (11–20) InGaN quantum dots grown by a quasi‐two‐temperature method

Atomic and electronic structure of the cleaved non-polar 6H-SiC(112̄0) and GaN(11̄00) surfaces

Low defect large area semi‐polar (11 2) GaN grown on patterned (113) silicon

Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation

Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (112ˉ0) GaN

Novel Diode Structures Based on Polar and Non-polar III-Nitride Semiconductors

Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN

Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE

(Al,Ga,In)N heterostructures grown along polar and non-polar directions by plasma-assisted molecular beam epitaxy

(Al,Ga,In)N heterostructures grown along polar and non-polar directions by plasma-assisted molecular beam epitaxy

Structure and composition of non‐polar (11‐20) InGaN nanorings grown by modified droplet epitaxy

Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire

High‐temperature performance of non‐polar (11–20) InGaN quantum dots grown by a quasi‐two‐temperature method

Atomic and electronic structure of the cleaved non-polar 6H-SiC(112̄0) and GaN(11̄00) surfaces

Low defect large area semi‐polar (11 2) GaN grown on patterned (113) silicon

Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation

Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (112ˉ0) GaN

Novel Diode Structures Based on Polar and Non-polar III-Nitride Semiconductors

Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN

Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE

(Al,Ga,In)N heterostructures grown along polar and non-polar directions by plasma-assisted molecular beam epitaxy

(Al,Ga,In)N heterostructures grown along polar and non-polar directions by plasma-assisted molecular beam epitaxy

Structure and composition of non‐polar (11‐20) InGaN nanorings grown by modified droplet epitaxy

Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire

High‐temperature performance of non‐polar (11–20) InGaN quantum dots grown by a quasi‐two‐temperature method

Atomic and electronic structure of the cleaved non-polar 6H-SiC(112̄0) and GaN(11̄00) surfaces

Low defect large area semi‐polar (11 2) GaN grown on patterned (113) silicon

Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation

Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (112ˉ0) GaN

Novel Diode Structures Based on Polar and Non-polar III-Nitride Semiconductors

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