Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2045-2322
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
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online resource.
- Erschienen in
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Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties ; volume:8 ; number:1 ; day:7 ; month:8 ; year:2018 ; pages:1-10 ; date:12.2018
Scientific reports ; 8, Heft 1 (7.8.2018), 1-10, 12.2018
- Klassifikation
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Physik
- Urheber
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Moun, Monika
- Beteiligte Personen und Organisationen
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Kumar, Mukesh
Garg, Manjari
Pathak, Ravi
Singh, Rajendra
SpringerLink (Online service)
- DOI
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10.1038/s41598-018-30237-8
- URN
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urn:nbn:de:101:1-2018100320580437940806
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:37 MESZ
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Beteiligte
- Moun, Monika
- Kumar, Mukesh
- Garg, Manjari
- Pathak, Ravi
- Singh, Rajendra
- SpringerLink (Online service)
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Ultrasensitive Photodetection in MoS 2 Avalanche Phototransistors
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Inkjet‐Printed p‐NiO/n‐ZnO Heterojunction Diodes for Photodetection Applications
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Strain-Modulated Photoelectric Responses from a Flexible α-In2Se3/3R MoS2 Heterojunction
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Engineering electrode interfaces for telecom-band photodetection in MoS2/Au heterostructures via sub-band light absorption
Synergistic lubrication of few-layer Ti3C2T x /MoS2 heterojunction as a lubricant additive