Boron emitters from doped PECVD layers for n-type crystalline silicon solar cells with LCO
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
-
Englisch
- Bibliographic citation
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In: Energy Procedia ; 55 (2014). - S. 235-240. - eISSN 1876-6102
- Classification
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Physik
- Event
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Veröffentlichung
- (where)
-
Konstanz
- (who)
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Bibliothek der Universität Konstanz
- (when)
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2015
- Contributor
- URN
-
urn:nbn:de:bsz:352-0-281433
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:49 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Engelhardt, Josh
- Frey, Alexander
- Mahlstaedt, Lisa
- Gloger, Sebastian
- Hahn, Giso
- Terheiden, Barbara
- Bibliothek der Universität Konstanz
Time of origin
- 2015
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Study on the Characteristics of ICP-PECVD Boron Silicate Glasses Dependent on Diborane Flux
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CVD Boron Containing Glasses - An Attractive Alternative Diffusion Source for High Quality Emitters and Simplified Processing : A Review
N-type bi-facial solar cells with boron emitters from doped PECVD layers
Entwicklung und Charakterisierung neuartiger Hochleistungssolarzellen
Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells
Etch-back of p+ structures for selective boron emitters in n-type c-Si solar cells
Investigation of contact resistivity on a laser doped boron emitter from CVD doping layers
Comparison of laser-doped emitters from as-deposited and thermally diffused APCVD doping glasses on silicon substrates
Kelvin probe force microscopy (KPFM) : investigation of local boron doped emitter regions formed by inkjet boron inks for industrial feasible IBC solar cells
Role of thermal SiO<sub>2</sub> on passivation of highly doped layer
New Method for Determination of Electrically Inactive Phosphorus in n-type Emitters
Study on the Characteristics of ICP-PECVD Boron Silicate Glasses Dependent on Diborane Flux
Laser doping from as-deposited CVD layers for high-efficiency crystalline silicon solar cells
CVD Boron Containing Glasses - An Attractive Alternative Diffusion Source for High Quality Emitters and Simplified Processing : A Review
N-type bi-facial solar cells with boron emitters from doped PECVD layers
Entwicklung und Charakterisierung neuartiger Hochleistungssolarzellen
Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells
Etch-back of p+ structures for selective boron emitters in n-type c-Si solar cells
Investigation of contact resistivity on a laser doped boron emitter from CVD doping layers
Comparison of laser-doped emitters from as-deposited and thermally diffused APCVD doping glasses on silicon substrates
Kelvin probe force microscopy (KPFM) : investigation of local boron doped emitter regions formed by inkjet boron inks for industrial feasible IBC solar cells
Role of thermal SiO<sub>2</sub> on passivation of highly doped layer
New Method for Determination of Electrically Inactive Phosphorus in n-type Emitters
Study on the Characteristics of ICP-PECVD Boron Silicate Glasses Dependent on Diborane Flux