Passivating boron silicate glasses for co-diffused high-efficiency n-type silicon solar cell application
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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In: Applied Physics Letters ; 107 (2015), 4. - 042102. - ISSN 0003-6951. - eISSN 1077-3118
- Classification
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Physik
- Event
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Veröffentlichung
- (where)
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Konstanz
- (who)
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Bibliothek der Universität Konstanz
- (when)
-
2015
- Creator
- URN
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urn:nbn:de:bsz:352-0-298384
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:55 AM CEST
Data provider
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Associated
- Engelhardt, Josh
- Frey, Alexander
- Gloger, Sebastian
- Hahn, Giso
- Terheiden, Barbara
- Bibliothek der Universität Konstanz
Time of origin
- 2015
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Etch-back of p+ structures for selective boron emitters in n-type c-Si solar cells
Study on the Characteristics of ICP-PECVD Boron Silicate Glasses Dependent on Diborane Flux
Comparison of bifacial and monofacial large-area n-type Si solar cells from 100 μm thin wire-sawn wafers
Electrical and optical analysis of dielectric layers for advanced passivation of BBr3 diffused p+ emitters in n-type c-Si solar cells
Passivation of Si wafers by Al2O3 films with different surface conditioning
Role of thermal SiO<sub>2</sub> on passivation of highly doped layer
Investigation of radiation damage to the Al2O3
RF-Sputtered Ti-Based Dielectric Layers as Al-Diffusion Barrier for Passivating Contacts
Study on boron emitter formation by BBr3 diffusion for n-type Si solar cell applications
Multifunctional ICP-PECVD Silicon Nitride Layers for High-efficiency Silicon Solar Cell Applications
Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells
New Method for Determination of Electrically Inactive Phosphorus in n-type Emitters
Etch-back of p+ structures for selective boron emitters in n-type c-Si solar cells
Study on the Characteristics of ICP-PECVD Boron Silicate Glasses Dependent on Diborane Flux
Comparison of bifacial and monofacial large-area n-type Si solar cells from 100 μm thin wire-sawn wafers
Electrical and optical analysis of dielectric layers for advanced passivation of BBr3 diffused p+ emitters in n-type c-Si solar cells
Passivation of Si wafers by Al2O3 films with different surface conditioning
Role of thermal SiO<sub>2</sub> on passivation of highly doped layer
Investigation of radiation damage to the Al2O3
RF-Sputtered Ti-Based Dielectric Layers as Al-Diffusion Barrier for Passivating Contacts
Study on boron emitter formation by BBr3 diffusion for n-type Si solar cell applications
Multifunctional ICP-PECVD Silicon Nitride Layers for High-efficiency Silicon Solar Cell Applications
Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells
New Method for Determination of Electrically Inactive Phosphorus in n-type Emitters
Etch-back of p+ structures for selective boron emitters in n-type c-Si solar cells
Study on the Characteristics of ICP-PECVD Boron Silicate Glasses Dependent on Diborane Flux
Comparison of bifacial and monofacial large-area n-type Si solar cells from 100 μm thin wire-sawn wafers
Electrical and optical analysis of dielectric layers for advanced passivation of BBr3 diffused p+ emitters in n-type c-Si solar cells
Passivation of Si wafers by Al2O3 films with different surface conditioning
Role of thermal SiO<sub>2</sub> on passivation of highly doped layer
Investigation of radiation damage to the Al2O3
RF-Sputtered Ti-Based Dielectric Layers as Al-Diffusion Barrier for Passivating Contacts