Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory Applications
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory Applications ; day:17 ; month:01 ; year:2024 ; extent:11
Advanced electronic materials ; (17.01.2024) (gesamt 11)
- Urheber
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Chauhan, Manvendra
Choudhary, Sumit
Sharma, Satinder K.
- DOI
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10.1002/aelm.202300724
- URN
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urn:nbn:de:101:1-2024011714282023961640
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
- 15.08.2025, 07:35 MESZ
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Beteiligte
- Chauhan, Manvendra
- Choudhary, Sumit
- Sharma, Satinder K.
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