Nanocrystalline Silicon Layers for the Application in Silicon Heterojunction Solar Cells
Abstract: After application in thin-film silicon tandem solar cells and in lab-scale silicon heterojunction (SHJ) devices, doped nanocrystalline silicon (nc) layers now arrived on the industrial stage. Despite their challenging deposition, the benefits they hold with respect to even higher device performance compared to their amorphous counterparts are significant and justify additional effort. In this contribution we report on developments towards industrially applicable processes for n- and p-doped silicon layers, nc-Si(n) and nc-Si(p), and their implementation in SHJ cells. Our investigation focuses on the impact of deposition temperature (Tdep) and the need for a thin oxide layer to promote fast nucleation of thin, sufficiently crystalline, doped nc-Si films in a single deposition chamber powered at 13.56 MHz. We identified main challenges for thin film and contact engineering and reached efficiencies of 23.0% with n- and 23.1% with p-type nc-Si approaching cell performances of our proce.... https://www.tib-op.org/ojs/index.php/siliconpv/article/view/959
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Nanocrystalline Silicon Layers for the Application in Silicon Heterojunction Solar Cells ; volume:1 ; year:2023
SiliconPV conference proceedings ; 1 (2023)
- Creator
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Steinmetz, Anamaria
Seif, Johannes
Voicu Vulcanean, Ioan
Kurt, Dilara
Pingel, Sebastian
Bivour, Martin
- Contributor
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Koc, Ibrahim
- DOI
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10.52825/siliconpv.v1i.959
- URN
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urn:nbn:de:101:1-2406241119173.474726888750
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:50 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Steinmetz, Anamaria
- Seif, Johannes
- Voicu Vulcanean, Ioan
- Kurt, Dilara
- Pingel, Sebastian
- Bivour, Martin
- Koc, Ibrahim
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