Double Nitrogenation Layer Formed Using Nitric Oxide for Enhancing Li + Storage Performance, Cycling Stability, and Safety of Si Electrodes
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Double Nitrogenation Layer Formed Using Nitric Oxide for Enhancing Li + Storage Performance, Cycling Stability, and Safety of Si Electrodes ; day:24 ; month:04 ; year:2024 ; extent:14
Advanced science ; (24.04.2024) (gesamt 14)
- Creator
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Hernandha, Rahmandhika Firdauzha Hary
Umesh, Bharath
Patra, Jagabandhu
Tseng, Chung‐Jen
Hsieh, Chien‐Te
Li, Ju
Chang, Jeng‐Kuei
- DOI
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10.1002/advs.202310062
- URN
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urn:nbn:de:101:1-2404241423354.628326079992
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:44 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Hernandha, Rahmandhika Firdauzha Hary
- Umesh, Bharath
- Patra, Jagabandhu
- Tseng, Chung‐Jen
- Hsieh, Chien‐Te
- Li, Ju
- Chang, Jeng‐Kuei
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