Double Nitrogenation Layer Formed Using Nitric Oxide for Enhancing Li + Storage Performance, Cycling Stability, and Safety of Si Electrodes
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
Double Nitrogenation Layer Formed Using Nitric Oxide for Enhancing Li + Storage Performance, Cycling Stability, and Safety of Si Electrodes ; day:24 ; month:04 ; year:2024 ; extent:14
Advanced science ; (24.04.2024) (gesamt 14)
- Urheber
-
Hernandha, Rahmandhika Firdauzha Hary
Umesh, Bharath
Patra, Jagabandhu
Tseng, Chung‐Jen
Hsieh, Chien‐Te
Li, Ju
Chang, Jeng‐Kuei
- DOI
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10.1002/advs.202310062
- URN
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urn:nbn:de:101:1-2404241423354.628326079992
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
- 07.08.2050, 11:36 MESZ
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Beteiligte
- Hernandha, Rahmandhika Firdauzha Hary
- Umesh, Bharath
- Patra, Jagabandhu
- Tseng, Chung‐Jen
- Hsieh, Chien‐Te
- Li, Ju
- Chang, Jeng‐Kuei
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