Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region ; day:27 ; month:11 ; year:2021 ; extent:9
Advanced energy materials ; (27.11.2021) (gesamt 9)

Creator: Peng, Ying
Miao, Lei
Liu, Chengyan
Song, Haili
Kurosawa, Masashi
Nakatsuka, Osamu
Back, Song Yi
Rhyee, Jong Soo
Murata, Masayuki
Tanemura, Sakae
Baba, Takahiro
Baba, Tetsuya
Ishizaki, Takahiro
Mori, Takao

DOI: 10.1002/aenm.202103191

URN: urn:nbn:de:101:1-2021112714110279293100

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:36 AM CEST

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Associated

Peng, Ying
Miao, Lei
Liu, Chengyan
Song, Haili
Kurosawa, Masashi
Nakatsuka, Osamu
Back, Song Yi
Rhyee, Jong Soo
Murata, Masayuki
Tanemura, Sakae
Baba, Takahiro
Baba, Tetsuya
Ishizaki, Takahiro
Mori, Takao

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Impact of tensile strain on low Sn content GeSn lasing

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Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

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Molekularstrahlepitaxie von isotopenreinen Ge- und α-Sn/Ge-Heterostrukturen [Alpha-Sn/Ge-Heterostrukturen]

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Si/Ge- und Ge/α-Sn-Übergitter [Ge-alpha-Sn-Übergitter] : Herstellung und transmissionselektronenmikroskopische Charakterisierung

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

Hochschulschrift

Synthesen und Strukturen von speziellen Ge(II)- [Ge-] und Sn(II)-Chelaten [Sn-Chelaten]

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Ramanstreuung an α-Sn [alpha-Sn], Si und Ge Übergittern

Photoemission Study of the Thermoelectric Group IV‐VI van der Waals Crystals (GeS, SnS, and SnSe)

Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures

Impact of tensile strain on low Sn content GeSn lasing

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Zur koordinativen Absättigung der Elemente Mg, Al Ge(II) [Ge] und Sn(II) [Sn] in molekularen Polycyclen

Structural Property Study for GeSn Thin Films

Strain engineering of transverse electric and transverse magnetic mode of material gain in GeSn/SiGeSn quantum wells

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Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

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Other Objects (12)

Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

Molekularstrahlepitaxie von isotopenreinen Ge- und α-Sn/Ge-Heterostrukturen [Alpha-Sn/Ge-Heterostrukturen]

Si/Ge- und Ge/α-Sn-Übergitter [Ge-alpha-Sn-Übergitter] : Herstellung und transmissionselektronenmikroskopische Charakterisierung

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

Synthesen und Strukturen von speziellen Ge(II)- [Ge-] und Sn(II)-Chelaten [Sn-Chelaten]

Ramanstreuung an α-Sn [alpha-Sn], Si und Ge Übergittern

Photoemission Study of the Thermoelectric Group IV‐VI van der Waals Crystals (GeS, SnS, and SnSe)

Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures

Impact of tensile strain on low Sn content GeSn lasing

Zur koordinativen Absättigung der Elemente Mg, Al Ge(II) [Ge] und Sn(II) [Sn] in molekularen Polycyclen

Structural Property Study for GeSn Thin Films

Strain engineering of transverse electric and transverse magnetic mode of material gain in GeSn/SiGeSn quantum wells

Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

Molekularstrahlepitaxie von isotopenreinen Ge- und α-Sn/Ge-Heterostrukturen [Alpha-Sn/Ge-Heterostrukturen]

Si/Ge- und Ge/α-Sn-Übergitter [Ge-alpha-Sn-Übergitter] : Herstellung und transmissionselektronenmikroskopische Charakterisierung

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

Synthesen und Strukturen von speziellen Ge(II)- [Ge-] und Sn(II)-Chelaten [Sn-Chelaten]

Ramanstreuung an α-Sn [alpha-Sn], Si und Ge Übergittern

Photoemission Study of the Thermoelectric Group IV‐VI van der Waals Crystals (GeS, SnS, and SnSe)

Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures

Impact of tensile strain on low Sn content GeSn lasing

Zur koordinativen Absättigung der Elemente Mg, Al Ge(II) [Ge] und Sn(II) [Sn] in molekularen Polycyclen

Structural Property Study for GeSn Thin Films

Strain engineering of transverse electric and transverse magnetic mode of material gain in GeSn/SiGeSn quantum wells

Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

Molekularstrahlepitaxie von isotopenreinen Ge- und α-Sn/Ge-Heterostrukturen [Alpha-Sn/Ge-Heterostrukturen]

Si/Ge- und Ge/α-Sn-Übergitter [Ge-alpha-Sn-Übergitter] : Herstellung und transmissionselektronenmikroskopische Charakterisierung

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

Synthesen und Strukturen von speziellen Ge(II)- [Ge-] und Sn(II)-Chelaten [Sn-Chelaten]

Ramanstreuung an α-Sn [alpha-Sn], Si und Ge Übergittern

Photoemission Study of the Thermoelectric Group IV‐VI van der Waals Crystals (GeS, SnS, and SnSe)

Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures

Impact of tensile strain on low Sn content GeSn lasing

Zur koordinativen Absättigung der Elemente Mg, Al Ge(II) [Ge] und Sn(II) [Sn] in molekularen Polycyclen

Structural Property Study for GeSn Thin Films

Strain engineering of transverse electric and transverse magnetic mode of material gain in GeSn/SiGeSn quantum wells

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