Atomistic Origin of the Enhanced Crystallization Speed and n‐Type Conductivity in Bi‐doped Ge‐Sb‐Te Phase‐Change Materials
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Atomistic Origin of the Enhanced Crystallization Speed and n‐Type Conductivity in Bi‐doped Ge‐Sb‐Te Phase‐Change Materials ; volume:24 ; number:46 ; year:2014 ; pages:7291-7300 ; extent:10
Advanced functional materials ; 24, Heft 46 (2014), 7291-7300 (gesamt 10)
- Urheber
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Skelton, Jonathan M.
Pallipurath, Anuradha R.
Lee, Tae‐Hoon
Elliott, Stephen R.
- DOI
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10.1002/adfm.201401202
- URN
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urn:nbn:de:101:1-2023012106312338021764
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:33 MESZ
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Beteiligte
- Skelton, Jonathan M.
- Pallipurath, Anuradha R.
- Lee, Tae‐Hoon
- Elliott, Stephen R.
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