Monografie
Epitaxial Growth and Ultrafast Dynamics of GeSbTe Alloys and GeTe/Sb2Te3 Superlattices
- Language
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Englisch
- Identifier
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1185579133
Subject
Alloys; Dynamics; Epitaxy; Raman spectroscopy
Contributor
- DOI
-
10.18452/18406
- URN
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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26.01.2023, 1:57 PM CET
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Structure and Dynamics of Microcavity Exciton-Polaritons in Acoustic Square Lattices
Recombination dynamics in (In,Ga)N/GaN heterostructures: Influence of localization and crystal polarity
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Modification of Surfaces with Carboxymethylthio and Piperazinyl Chelating Ligands for Heavy Metal Trapping Applications
Evaluation of techniques for handling luminescence in Raman spectroscopy for space application in regard to the search for extraterrestrial life
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Transmission electron microscopic investigation of the growth of group III sesquioxides Ga2O3
Growth and properties of GaAs/(In,Ga)As core-shell nanowire arrays on Si
Fabrication and characterization of graphene nanoribbons epitaxially grown on SiC(0001)
Strain-related phenomena in (In,Ga)N/GaN nanowires and rods investigated by nanofocus x-ray diffraction and the finite element method
Growth Kinetics, Thermodynamics, and Phase Formation of group-III and IV oxides during Molecular Beam Epitaxy
In-situ transmission electron microscopy on high-temperature phase transitions of Ge-Sb-Te alloys
Structure and Dynamics of Microcavity Exciton-Polaritons in Acoustic Square Lattices
Recombination dynamics in (In,Ga)N/GaN heterostructures: Influence of localization and crystal polarity
Epitaxial growth and characterization of GeTe and GeTe/Sb2Te3 superlattices
Modification of Surfaces with Carboxymethylthio and Piperazinyl Chelating Ligands for Heavy Metal Trapping Applications
Evaluation of techniques for handling luminescence in Raman spectroscopy for space application in regard to the search for extraterrestrial life
Growth of axial and core-shell (In,Ga)N/GaN heterostructures on GaN nanowires on TiN
Transmission electron microscopic investigation of the growth of group III sesquioxides Ga2O3
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