Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure ; volume:15 ; number:1 ; day:2 ; month:8 ; year:2020 ; pages:1-9 ; date:12.2020
Nanoscale research letters ; 15, Heft 1 (2.8.2020), 1-9, 12.2020
- Creator
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Zhang, Siqing
Liu, Yan
Zhou, Jiuren
Ma, Meng
Gao, Anyuan
Zheng, Binjie
Li, Lingfei
Su, Xin
Han, Genquan
Zhang, Jincheng
Shi, Yi
Wang, Xiaomu
Hao, Yue
- Contributor
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SpringerLink (Online service)
- DOI
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10.1186/s11671-020-03384-z
- URN
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urn:nbn:de:101:1-2020092715291126197525
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:45 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Zhang, Siqing
- Liu, Yan
- Zhou, Jiuren
- Ma, Meng
- Gao, Anyuan
- Zheng, Binjie
- Li, Lingfei
- Su, Xin
- Han, Genquan
- Zhang, Jincheng
- Shi, Yi
- Wang, Xiaomu
- Hao, Yue
- SpringerLink (Online service)