Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
1556-276X
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure ; volume:15 ; number:1 ; day:2 ; month:8 ; year:2020 ; pages:1-9 ; date:12.2020
Nanoscale research letters ; 15, Heft 1 (2.8.2020), 1-9, 12.2020

Creator
Zhang, Siqing
Liu, Yan
Zhou, Jiuren
Ma, Meng
Gao, Anyuan
Zheng, Binjie
Li, Lingfei
Su, Xin
Han, Genquan
Zhang, Jincheng
Shi, Yi
Wang, Xiaomu
Hao, Yue
Contributor
SpringerLink (Online service)

DOI
10.1186/s11671-020-03384-z
URN
urn:nbn:de:101:1-2020092715291126197525
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:45 AM CEST

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Associated

  • Zhang, Siqing
  • Liu, Yan
  • Zhou, Jiuren
  • Ma, Meng
  • Gao, Anyuan
  • Zheng, Binjie
  • Li, Lingfei
  • Su, Xin
  • Han, Genquan
  • Zhang, Jincheng
  • Shi, Yi
  • Wang, Xiaomu
  • Hao, Yue
  • SpringerLink (Online service)

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