High-power-density hybrid planar-type silicon thermoelectric generator with phononic nanostructures

Abstract: Energy harvesting is essential for the internet-of-things networks where a tremendous number of sensors require power. Thermoelectric generators (TEGs), especially those based on silicon (Si), are a promising source of clean and sustainable energy for these sensors. Although large thermoelectric figure of merit has been reported for nanostructured Si material, however, nanostructuring has not been effectively used in device applications, and the reported performance of hybrid planar-type Si TEGs never exceeded normalized powers of
due to the poor thermoelectric performance of Si and the suboptimal design of the devices. Here, we report a hybrid planar-type Si TEG with a normalized power of
around room temperature. The increase in thermoelectric performance of Si by nanostructuring based on the phonon-glass electron-crystal concept and optimized three-dimensional heat-guiding structures resulted in a record-high power density. The improvement of power generation by a factor of 10 makes the once-a-day sensing applications realistic in a practical environment for the first time. In-field testing demonstrated that our Si TEG functions as a sufficient energy harvester. This demonstration paves the way for energy harvesting with a low-environmental load and cost-effective material with high throughput, a necessary condition for energy-autonomous sensor nodes for the trillion sensors universe

Angaben zum Objekt

• Standort: Deutsche Nationalbibliothek Frankfurt am Main
• Umfang: Online-Ressource
• Sprache: Englisch
• Anmerkungen: Materials today. - 45 (2024) , 101452, ISSN: 2542-5293

Klassifikation und Themen

• Klassifikation: Elektrotechnik, Elektronik

Beteiligte, Orts- und Zeitangaben

• Ereignis: Veröffentlichung
• (wo): Freiburg
• (wer): Universität
• (wann): 2024
• Urheber: Yanagisawa, Ryoto ; Koike, Sota ; Nawae, Tomoki ; Tsujii, Naohito ; Wang, Yanan ; Mori, Takao ; Ruther, Patrick ; Paul, Oliver ; Yoshida, Yoshifumi ; Harashima, Junichi ; Kinumura, Takashi ; Inada, Yuta ; Nomura, Masahiro
• Beteiligte Personen und Organisationen: Albert-Ludwigs-Universität Freiburg. Institut für Mikrosystemtechnik ; Albert-Ludwigs-Universität Freiburg. Professur für Materialien der Mikrosystemtechnik

Weitere Informationen

• DOI: 10.1016/j.mtphys.2024.101452
• URN: urn:nbn:de:bsz:25-freidok-2498162
• Rechteinformation: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
• Letzte Aktualisierung: 14.08.2025, 10:46 MESZ