Customizing the Polarity of Single‐Walled Carbon‐Nanotube Field‐Effect Transistors Using Solution‐Based Additives

to related objects

Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: Customizing the Polarity of Single‐Walled Carbon‐Nanotube Field‐Effect Transistors Using Solution‐Based Additives ; volume:6 ; number:3 ; year:2020 ; extent:9
Advanced electronic materials ; 6, Heft 3 (2020) (gesamt 9)

Creator: Salazar‐Rios, Jorge Mario
Sengrian, Aprizal Akbar
Talsma, Wytse
Duim, Herman
Abdu‐Aguye, Mustapha
Jung, Stefan
Fröhlich, Nils
Allard, Sybille
Scherf, Ullrich
Loi, Maria Antonietta

DOI: 10.1002/aelm.201900789

URN: urn:nbn:de:101:1-2022062310574265749280

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:25 AM CEST

Data provider

This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.

Show original at data provider

Associated

Salazar‐Rios, Jorge Mario
Sengrian, Aprizal Akbar
Talsma, Wytse
Duim, Herman
Abdu‐Aguye, Mustapha
Jung, Stefan
Fröhlich, Nils
Allard, Sybille
Scherf, Ullrich
Loi, Maria Antonietta

Other Objects (12)

Integrated Circuits Based on Individual Single-Walled Carbon Nanotube Field-Effect Transistors

Frequency dependence of dielectrophoretic fabrication of single-walled carbon nanotube field-effect transistors

Hochschulschrift

Dielectrophoresis of single-walled carbon nanotubes

Remarkably Stable, High‐Quality Semiconducting Single‐Walled Carbon Nanotube Inks for Highly Reproducible Field‐Effect Transistors

Symmetry Properties of Single-Walled BC2N Nanotubes

Single‐Walled Carbon Nanotubes Encapsulated within Metallacycles

Covalent Functionalization of Single-Walled Carbon Nanotubes

Single‐Walled Carbon Nanotubes Encapsulated within Metallacycles

Hochschulschrift

Type selective functionalization of single-walled carbon nanotubes

Alignment of Nanoscale Single-Walled Carbon Nanotubes Strands

Pressure-induced phenomena in single-walled carbon nanotubes

Integrated Circuits Based on Individual Single-Walled Carbon Nanotube Field-Effect Transistors

Frequency dependence of dielectrophoretic fabrication of single-walled carbon nanotube field-effect transistors

Hochschulschrift

Dielectrophoresis of single-walled carbon nanotubes

Remarkably Stable, High‐Quality Semiconducting Single‐Walled Carbon Nanotube Inks for Highly Reproducible Field‐Effect Transistors

Symmetry Properties of Single-Walled BC2N Nanotubes

Single‐Walled Carbon Nanotubes Encapsulated within Metallacycles

Covalent Functionalization of Single-Walled Carbon Nanotubes

Single‐Walled Carbon Nanotubes Encapsulated within Metallacycles

Hochschulschrift

Type selective functionalization of single-walled carbon nanotubes

Alignment of Nanoscale Single-Walled Carbon Nanotubes Strands

Pressure-induced phenomena in single-walled carbon nanotubes

Integrated Circuits Based on Individual Single-Walled Carbon Nanotube Field-Effect Transistors

Frequency dependence of dielectrophoretic fabrication of single-walled carbon nanotube field-effect transistors

Hochschulschrift

Dielectrophoresis of single-walled carbon nanotubes

Remarkably Stable, High‐Quality Semiconducting Single‐Walled Carbon Nanotube Inks for Highly Reproducible Field‐Effect Transistors

Symmetry Properties of Single-Walled BC2N Nanotubes

Single‐Walled Carbon Nanotubes Encapsulated within Metallacycles

Covalent Functionalization of Single-Walled Carbon Nanotubes

Single‐Walled Carbon Nanotubes Encapsulated within Metallacycles

Hochschulschrift

Type selective functionalization of single-walled carbon nanotubes

Alignment of Nanoscale Single-Walled Carbon Nanotubes Strands

Pressure-induced phenomena in single-walled carbon nanotubes

Cultural heritage institutions wishing to register will find more information here.

Fields marked * need to be filled in.

Username*

Please enter your username

Email*

Please enter your email address

Please do not fill this field

First name

Last name

Password*

Please enter your password

Confirm password*

Please enter the same password

I have read the terms of use and the privacy policy for the collection of personal data and accept them. *

This field is required.

I would like to subscribe to the newsletter of the Deutsche Digitale Bibliothek. See newsletter subscription info.

Account created

Your "My DDB" account has been successfully created. Before you can log in to your account, you must click the confirmation link in the message we just sent to the email address you provided.

Customizing the Polarity of Single‐Walled Carbon‐Nanotube Field‐Effect Transistors Using Solution‐Based Additives

Object Details

References and Relationships

Contributors, Places and Time

Further information

Data provider

Associated

Other Objects (12)

Integrated Circuits Based on Individual Single-Walled Carbon Nanotube Field-Effect Transistors

Frequency dependence of dielectrophoretic fabrication of single-walled carbon nanotube field-effect transistors

Frequency dependence of dielectrophoretic fabrication of single-walled carbon nanotube field-effect transistors

Dielectrophoresis of single-walled carbon nanotubes

Remarkably Stable, High‐Quality Semiconducting Single‐Walled Carbon Nanotube Inks for Highly Reproducible Field‐Effect Transistors

Symmetry Properties of Single-Walled BC2N Nanotubes

Single‐Walled Carbon Nanotubes Encapsulated within Metallacycles

Covalent Functionalization of Single-Walled Carbon Nanotubes

Single‐Walled Carbon Nanotubes Encapsulated within Metallacycles

Type selective functionalization of single-walled carbon nanotubes

Alignment of Nanoscale Single-Walled Carbon Nanotubes Strands

Pressure-induced phenomena in single-walled carbon nanotubes

Integrated Circuits Based on Individual Single-Walled Carbon Nanotube Field-Effect Transistors

Frequency dependence of dielectrophoretic fabrication of single-walled carbon nanotube field-effect transistors

Frequency dependence of dielectrophoretic fabrication of single-walled carbon nanotube field-effect transistors

Dielectrophoresis of single-walled carbon nanotubes

Remarkably Stable, High‐Quality Semiconducting Single‐Walled Carbon Nanotube Inks for Highly Reproducible Field‐Effect Transistors

Symmetry Properties of Single-Walled BC2N Nanotubes

Single‐Walled Carbon Nanotubes Encapsulated within Metallacycles

Covalent Functionalization of Single-Walled Carbon Nanotubes

Single‐Walled Carbon Nanotubes Encapsulated within Metallacycles

Type selective functionalization of single-walled carbon nanotubes

Alignment of Nanoscale Single-Walled Carbon Nanotubes Strands

Pressure-induced phenomena in single-walled carbon nanotubes

Integrated Circuits Based on Individual Single-Walled Carbon Nanotube Field-Effect Transistors

Frequency dependence of dielectrophoretic fabrication of single-walled carbon nanotube field-effect transistors

Frequency dependence of dielectrophoretic fabrication of single-walled carbon nanotube field-effect transistors

Dielectrophoresis of single-walled carbon nanotubes

Remarkably Stable, High‐Quality Semiconducting Single‐Walled Carbon Nanotube Inks for Highly Reproducible Field‐Effect Transistors

Symmetry Properties of Single-Walled BC2N Nanotubes

Single‐Walled Carbon Nanotubes Encapsulated within Metallacycles

Covalent Functionalization of Single-Walled Carbon Nanotubes

Single‐Walled Carbon Nanotubes Encapsulated within Metallacycles

Type selective functionalization of single-walled carbon nanotubes

Alignment of Nanoscale Single-Walled Carbon Nanotubes Strands

Pressure-induced phenomena in single-walled carbon nanotubes

Related objects

Reset password