A High-Performance Rectangular Gate U Channel FETs with Only 2-nm Distance between Source and Drain Contacts
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
1556-276X
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
online resource.
- Bibliographic citation
-
A High-Performance Rectangular Gate U Channel FETs with Only 2-nm Distance between Source and Drain Contacts ; volume:14 ; number:1 ; day:4 ; month:2 ; year:2019 ; pages:1-7 ; date:12.2019
Nanoscale research letters ; 14, Heft 1 (4.2.2019), 1-7, 12.2019
- Classification
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Elektrotechnik, Elektronik
- Creator
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Liu, Xi
Xia, Zhengliang
Jin, Xiaoshi
Lee, Jong-Ho
- Contributor
-
SpringerLink (Online service)
- DOI
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10.1186/s11671-019-2879-0
- URN
-
urn:nbn:de:101:1-2019030922161307390279
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
22.08.2025, 12:46 PM CEST
Data provider
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Associated
- Liu, Xi
- Xia, Zhengliang
- Jin, Xiaoshi
- Lee, Jong-Ho
- SpringerLink (Online service)
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