Ultrafast Q-boosting in semiconductor metasurfaces

Abstract: All-optical tunability of semiconductor metasurfaces offers unique opportunities for novel time-varying effects, including frequency conversion and light trapping. However, the all-optical processes often induce optical absorption that fundamentally limits the possible dynamic increase of their quality factor (Q-boosting). Here, we propose and numerically demonstrate the concept of large Q-boosting in a single-material metasurface by dynamically reducing its structural anisotropy on a femtosecond timescale. This balance is achieved by excitation with a structured pump and takes advantage of the band-filling effect in a GaAs direct-bandgap semiconductor to eliminate the free-carrier-induced loss. We show that this approach allows a dynamic boosting of the resonance quality factor over orders of magnitude, only limited by the free-carrier relaxation processes. The proposed approach offers complete dynamic control over the resonance bandwidth and opens applications in frequency conversion and light trapping.

Angaben zum Objekt

• Standort: Deutsche Nationalbibliothek Frankfurt am Main
• Umfang: Online-Ressource
• Sprache: Englisch

Verweise und Beziehungen

• Erschienen in: Ultrafast Q-boosting in semiconductor metasurfaces ; volume:13 ; number:12 ; year:2024 ; pages:2173-2182 ; extent:10 ; Nanophotonics ; 13, Heft 12 (2024), 2173-2182 (gesamt 10)

Beteiligte, Orts- und Zeitangaben

• Urheber: Yang, Ziwei ; Liu, Mingkai ; Smirnova, Daria ; Komar, Andrei ; Shcherbakov, Maxim ; Pertsch, Thomas ; Neshev, Dragomir

Weitere Informationen

• DOI: 10.1515/nanoph-2023-0718
• URN: urn:nbn:de:101:1-2405211538153.643085826389
• Rechteinformation: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
• Letzte Aktualisierung: 14.08.2025, 11:03 MESZ