Annealing effect and photovoltaic properties of nano-ZnS/textured p-Si heterojunction
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
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online resource.
- Erschienen in
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Annealing effect and photovoltaic properties of nano-ZnS/textured p-Si heterojunction ; volume:8 ; number:1 ; day:9 ; month:11 ; year:2013 ; pages:1-6 ; date:12.2013
Nanoscale research letters ; 8, Heft 1 (9.11.2013), 1-6, 12.2013
- Urheber
-
Ji, Liang-Wen
Hsiao, Yu-Jen
Tang, I-Tseng
Meen, Teen-Hang
Liu, Chien-Hung
Tsai, Jenn-Kai
Wu, Tien-Chuan
Wu, Yue-Sian
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1186/1556-276X-8-470
- URN
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urn:nbn:de:101:1-2021081720032051569253
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:58 MESZ
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Beteiligte
- Ji, Liang-Wen
- Hsiao, Yu-Jen
- Tang, I-Tseng
- Meen, Teen-Hang
- Liu, Chien-Hung
- Tsai, Jenn-Kai
- Wu, Tien-Chuan
- Wu, Yue-Sian
- SpringerLink (Online service)
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Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
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