- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
1556-276X
- Extent
-
Online-Ressource
- Language
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Englisch
- Notes
-
online resource.
- Bibliographic citation
-
Electron Tomography of Pencil-Shaped GaN/(In,Ga)N Core-Shell Nanowires ; volume:14 ; number:1 ; day:12 ; month:7 ; year:2019 ; pages:1-10 ; date:12.2019
Nanoscale research letters ; 14, Heft 1 (12.7.2019), 1-10, 12.2019
- Creator
-
Nicolai, Lars
Gačević, Žarko
Calleja, Enrique
Trampert, Achim
- Contributor
-
SpringerLink (Online service)
- DOI
-
10.1186/s11671-019-3072-1
- URN
-
urn:nbn:de:101:1-2019110611315458160058
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:31 AM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Nicolai, Lars
- Gačević, Žarko
- Calleja, Enrique
- Trampert, Achim
- SpringerLink (Online service)
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Multiple radial phosphorus segregations in GaAsP core-shell nanowires
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Quantum‐Confinement‐Enhanced Thermoelectric Properties in Modulation‐Doped GaAs–AlGaAs Core–Shell Nanowires
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InGaN nanowires on silicon
Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch
Acoustic charge transport in GaN nanowires
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Compressively-strained GaSb nanowires with core-shell heterostructures
Modeling of the growth of GaAs–AlGaAs core–shell nanowires
Quantum transport in GaAs/InAs core/shell nanowires
Multiple radial phosphorus segregations in GaAsP core-shell nanowires
Growth of axial and core-shell (In,Ga)N/GaN heterostructures on GaN nanowires on TiN
Quantum‐Confinement‐Enhanced Thermoelectric Properties in Modulation‐Doped GaAs–AlGaAs Core–Shell Nanowires
GaN nanowires on diamond
InGaN nanowires on silicon
Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch
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