Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2045-2322
- Umfang
-
Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
online resource.
- Erschienen in
-
Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure ; volume:8 ; number:1 ; day:13 ; month:4 ; year:2018 ; pages:1-13 ; date:12.2018
Scientific reports ; 8, Heft 1 (13.4.2018), 1-13, 12.2018
- Klassifikation
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Physik
- Urheber
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Ishikawa, Fumitaro
- Beteiligte Personen und Organisationen
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Higashi, Kotaro
Fuyuno, Satoshi
Morifuji, Masato
Kondow, Masahiko
Trampert, Achim
SpringerLink (Online service)
- DOI
-
10.1038/s41598-018-23941-y
- URN
-
urn:nbn:de:101:1-2018061421464270224001
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:21 MESZ
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Beteiligte
- Ishikawa, Fumitaro
- Higashi, Kotaro
- Fuyuno, Satoshi
- Morifuji, Masato
- Kondow, Masahiko
- Trampert, Achim
- SpringerLink (Online service)
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