Analysis on charge-retention characteristics of sub-threshold synaptic IGZO thin-film transistors with defective gate oxides
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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1 Online-Ressource.
- Sprache
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Englisch
- Erschienen in
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Analysis on charge-retention characteristics of sub-threshold synaptic IGZO thin-film transistors with defective gate oxides ; volume:14 ; number:1 ; day:24 ; month:5 ; year:2024 ; pages:1-7 ; date:12.2024
Scientific reports ; 14, Heft 1 (24.5.2024), 1-7, 12.2024
- Urheber
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Lee, Sungsik
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
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10.1038/s41598-024-62872-9
- URN
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urn:nbn:de:101:1-2408051051326.101299892170
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 10:48 MESZ
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Beteiligte
- Lee, Sungsik
- SpringerLink (Online service)
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