Hochschulschrift
Präzession optisch ausgerichteter Elektronenspins in der Schottky-Randschicht von GaAs
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Dimensions
-
30 cm
- Extent
-
110 S.
- Language
-
Deutsch
- Notes
-
graph. Darst.
Als Ms. gedr.
Zugl.: Köln, Univ., Diss., 1986
- Keyword
-
Halbleiter
Oberfläche (Physik)
GaAs
Galliumarsenid
Photoemission
Halbleiter
Oberfläche
Galliumarsenid-Bauelement
Galliumarsenid
Fotoemission
- Event
-
Veröffentlichung
- (where)
-
Jülich
- (who)
-
Zentralbibliothek d. Kernforschungsanlage
- (when)
-
1986
- Creator
-
Riechert, Henning
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.06.2025, 1:51 PM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Riechert, Henning
- Zentralbibliothek d. Kernforschungsanlage
Time of origin
- 1986
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Novel Methods for Controlled Self-Catalyzed Growth of GaAs Nanowires and GaAs/AlxGa1-xAs Axial Nanowire Heterostructures on Si Substrates by Molecular Beam Epitaxy
Growth of axial and core-shell (In,Ga)N/GaN heterostructures on GaN nanowires on TiN
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