Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
1556-276X
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs ; volume:17 ; number:1 ; day:15 ; month:12 ; year:2022 ; pages:1-6 ; date:12.2022
Nanoscale research letters ; 17, Heft 1 (15.12.2022), 1-6, 12.2022

Classification
Elektrotechnik, Elektronik

Creator
Zhang, Zhaohao
Li, Yudong
Xu, Jing
Tang, Bo
Xiang, Jinjuan
Li, Junjie
Zhang, Qingzhu
Wu, Zhenhua
Yin, Huaxiang
Luo, Jun
Wang, Wenwu
Contributor
SpringerLink (Online service)

DOI
10.1186/s11671-022-03767-4
URN
urn:nbn:de:101:1-2023022421054785613453
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 11:00 AM CEST

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Associated

  • Zhang, Zhaohao
  • Li, Yudong
  • Xu, Jing
  • Tang, Bo
  • Xiang, Jinjuan
  • Li, Junjie
  • Zhang, Qingzhu
  • Wu, Zhenhua
  • Yin, Huaxiang
  • Luo, Jun
  • Wang, Wenwu
  • SpringerLink (Online service)

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