Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs ; volume:17 ; number:1 ; day:15 ; month:12 ; year:2022 ; pages:1-6 ; date:12.2022
Nanoscale research letters ; 17, Heft 1 (15.12.2022), 1-6, 12.2022
- Classification
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Elektrotechnik, Elektronik
- Creator
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Zhang, Zhaohao
Li, Yudong
Xu, Jing
Tang, Bo
Xiang, Jinjuan
Li, Junjie
Zhang, Qingzhu
Wu, Zhenhua
Yin, Huaxiang
Luo, Jun
Wang, Wenwu
- Contributor
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SpringerLink (Online service)
- DOI
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10.1186/s11671-022-03767-4
- URN
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urn:nbn:de:101:1-2023022421054785613453
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 11:00 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Zhang, Zhaohao
- Li, Yudong
- Xu, Jing
- Tang, Bo
- Xiang, Jinjuan
- Li, Junjie
- Zhang, Qingzhu
- Wu, Zhenhua
- Yin, Huaxiang
- Luo, Jun
- Wang, Wenwu
- SpringerLink (Online service)