Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
1556-276X
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
online resource.
- Bibliographic citation
-
Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates ; volume:13 ; number:1 ; day:11 ; month:12 ; year:2018 ; pages:1-8 ; date:12.2018
Nanoscale research letters ; 13, Heft 1 (11.12.2018), 1-8, 12.2018
- Creator
-
Kumar, Ashutosh
Mitsuishi, Kazutaka
Hara, Toru
Kimoto, Koji
Irokawa, Yoshihiro
Nabatame, Toshihide
Takashima, Shinya
Ueno, Katsunori
Edo, Masaharu
Koide, Yasuo
- Contributor
-
SpringerLink (Online service)
- DOI
-
10.1186/s11671-018-2804-y
- URN
-
urn:nbn:de:101:1-2019012715192366395139
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:48 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Kumar, Ashutosh
- Mitsuishi, Kazutaka
- Hara, Toru
- Kimoto, Koji
- Irokawa, Yoshihiro
- Nabatame, Toshihide
- Takashima, Shinya
- Ueno, Katsunori
- Edo, Masaharu
- Koide, Yasuo
- SpringerLink (Online service)
Other Objects (12)
Wachstum und Charakterisierung von Cu-dotiertem GaN und GaN auf MgF2
Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN
Photoluminescence from GaN Implanted with Be and F
Ternary magnesium gallides – synthesis, crystal chemistry and properties of CaMgGa, SrMgGa, BaMgGa and YbMgGa
Hole Conduction Mechanism in In–Mg‐Codoped GaN Prepared via Pulsed Sputtering Deposition
Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
Microstructural Investigations of Epitaxial GaN Films Grown on MgF2 using Transmission Electron Microscopy
Spin injection in MnGa/ GaN heterostructures
The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes
GaN nanowires on diamond
GaN active rectifier diode
Bulk GaN Ion Cleaving
Wachstum und Charakterisierung von Cu-dotiertem GaN und GaN auf MgF2
Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN
Photoluminescence from GaN Implanted with Be and F
Ternary magnesium gallides – synthesis, crystal chemistry and properties of CaMgGa, SrMgGa, BaMgGa and YbMgGa
Hole Conduction Mechanism in In–Mg‐Codoped GaN Prepared via Pulsed Sputtering Deposition
Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
Microstructural Investigations of Epitaxial GaN Films Grown on MgF2 using Transmission Electron Microscopy
Spin injection in MnGa/ GaN heterostructures
The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes
GaN nanowires on diamond
GaN active rectifier diode
Bulk GaN Ion Cleaving
Wachstum und Charakterisierung von Cu-dotiertem GaN und GaN auf MgF2
Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN
Photoluminescence from GaN Implanted with Be and F
Ternary magnesium gallides – synthesis, crystal chemistry and properties of CaMgGa, SrMgGa, BaMgGa and YbMgGa
Hole Conduction Mechanism in In–Mg‐Codoped GaN Prepared via Pulsed Sputtering Deposition
Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
Microstructural Investigations of Epitaxial GaN Films Grown on MgF2 using Transmission Electron Microscopy
Spin injection in MnGa/ GaN heterostructures
The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes
GaN nanowires on diamond
GaN active rectifier diode