- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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1 Online-Ressource.
- Language
-
Englisch
- Bibliographic citation
-
Unveiling the origin of n-type doping of natural MoS2: carbon ; volume:7 ; number:1 ; day:5 ; month:9 ; year:2023 ; pages:1-7 ; date:12.2023
npj 2D materials and applications ; 7, Heft 1 (5.9.2023), 1-7, 12.2023
- Creator
-
Park, Youngsin
Li, Nannan
Jung, Daesung
Singh, Laishram Tomba
Baik, Jaeyoon
Lee, Eunsook
Oh, Dongseok
Kim, Young Dok
Lee, Jin Yong
Woo, Jeongseok
Park, Seungmin
Kim, Hanchul
Lee, Geunseop
Lee, Geunsik
Hwang, Chan-Cuk
- Contributor
-
SpringerLink (Online service)
- DOI
-
10.1038/s41699-023-00424-x
- URN
-
urn:nbn:de:101:1-2024020710313221460891
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:34 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Park, Youngsin
- Li, Nannan
- Jung, Daesung
- Singh, Laishram Tomba
- Baik, Jaeyoon
- Lee, Eunsook
- Oh, Dongseok
- Kim, Young Dok
- Lee, Jin Yong
- Woo, Jeongseok
- Park, Seungmin
- Kim, Hanchul
- Lee, Geunseop
- Lee, Geunsik
- Hwang, Chan-Cuk
- SpringerLink (Online service)
Other Objects (12)
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Reconfiguring crystal and electronic structures of MoS2 by substitutional doping
N-type molecular doping of a semicrystalline conjugated polymer through cation exchange
Effect of lithium doping on the optical properties of monolayer MoS2
N-type doping of organic thin films using a novel class of dopants
N-type doping of organic thin films using a novel class of dopants
Chemically activating MoS2 via spontaneous atomic palladium interfacial doping towards efficient hydrogen evolution
Revisiting the origin of non-volatile resistive switching in MoS2 atomristor
Novel dopants for n-type doping of electron transport materials: cationic dyes and their bases
Novel dopants for n-type doping of electron transport materials: cationic dyes and their bases
Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits
Improving the Photoelectric Characteristics of MoS2 Thin Films by Doping Rare Earth Element Erbium
Potassium doping of sputtered MoS2 films by CVD method
Reconfiguring crystal and electronic structures of MoS2 by substitutional doping
N-type molecular doping of a semicrystalline conjugated polymer through cation exchange
Effect of lithium doping on the optical properties of monolayer MoS2
N-type doping of organic thin films using a novel class of dopants
N-type doping of organic thin films using a novel class of dopants
Chemically activating MoS2 via spontaneous atomic palladium interfacial doping towards efficient hydrogen evolution
Revisiting the origin of non-volatile resistive switching in MoS2 atomristor
Novel dopants for n-type doping of electron transport materials: cationic dyes and their bases
Novel dopants for n-type doping of electron transport materials: cationic dyes and their bases
Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits
Improving the Photoelectric Characteristics of MoS2 Thin Films by Doping Rare Earth Element Erbium
Potassium doping of sputtered MoS2 films by CVD method
Reconfiguring crystal and electronic structures of MoS2 by substitutional doping
N-type molecular doping of a semicrystalline conjugated polymer through cation exchange
Effect of lithium doping on the optical properties of monolayer MoS2
N-type doping of organic thin films using a novel class of dopants
N-type doping of organic thin films using a novel class of dopants
Chemically activating MoS2 via spontaneous atomic palladium interfacial doping towards efficient hydrogen evolution
Revisiting the origin of non-volatile resistive switching in MoS2 atomristor
Novel dopants for n-type doping of electron transport materials: cationic dyes and their bases
Novel dopants for n-type doping of electron transport materials: cationic dyes and their bases
Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits