Spin‐Orbit Torque Driven Magnetization Switching and Precession by Manipulating Thickness of CoFeB/W Heterostructures

Abstract: The switching of magnetization via spin‐orbit torque has attracted much attention because of its fast switching and low power consumption. Numerous studies have focused on increasing the conversion efficiency from charge to spin current and out‐of‐plane magnetization cases. Recently, there have been reports on the fast and deterministic switching of in‐plane magnetization devices. It is reported that an in‐plane spin‐orbit torque (SOT) device can archive the oscillation, precession, and direct switching by a combination of torques—controlling the thickness of the ferromagnet and normal metal. With proper layer thicknesses, the device can show the three dynamics listed above at each current density in a macro spin simulation. Based on an understanding of the role of torque‐driving magnetization dynamics, a dynamic map of an in‐plane SOT device depending on torque efficiency and current density is shown.

Standort
Deutsche Nationalbibliothek Frankfurt am Main
Umfang
Online-Ressource
Sprache
Englisch

Erschienen in
Spin‐Orbit Torque Driven Magnetization Switching and Precession by Manipulating Thickness of CoFeB/W Heterostructures ; volume:6 ; number:2 ; year:2020 ; extent:7
Advanced electronic materials ; 6, Heft 2 (2020) (gesamt 7)

Urheber
Kim, Changsoo
Chun, Byong Sun
Yoon, Jungbum
Kim, Dongseuk
Kim, Yong Jin
Cha, In Ho
Kim, Gyu Won
Kim, Dae Hyun
Moon, Kyoung‐Woong
Kim, Young Keun
Hwang, Chanyong

DOI
10.1002/aelm.201901004
URN
urn:nbn:de:101:1-2022070311281188209378
Rechteinformation
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Letzte Aktualisierung
15.08.2025, 07:33 MESZ

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Beteiligte

  • Kim, Changsoo
  • Chun, Byong Sun
  • Yoon, Jungbum
  • Kim, Dongseuk
  • Kim, Yong Jin
  • Cha, In Ho
  • Kim, Gyu Won
  • Kim, Dae Hyun
  • Moon, Kyoung‐Woong
  • Kim, Young Keun
  • Hwang, Chanyong

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