Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 2045-2322

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures ; volume:8 ; number:1 ; day:22 ; month:10 ; year:2018 ; pages:1-13 ; date:12.2018
Scientific reports ; 8, Heft 1 (22.10.2018), 1-13, 12.2018

Creator: Rainko, Denis

Contributor: Ikonic, Zoran
Vukmirović, Nenad
Stange, Daniela
von den Driesch, Nils
Grützmacher, Detlev
Buca, Dan
SpringerLink (Online service)

DOI: 10.1038/s41598-018-33820-1

URN: urn:nbn:de:101:1-2018112121420289268814

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:50 AM CEST

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Associated

Rainko, Denis
Ikonic, Zoran
Vukmirović, Nenad
Stange, Daniela
von den Driesch, Nils
Grützmacher, Detlev
Buca, Dan
SpringerLink (Online service)

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Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures

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Other Objects (12)

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Structural Property Study for GeSn Thin Films

Strain engineering of transverse electric and transverse magnetic mode of material gain in GeSn/SiGeSn quantum wells

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