Enhanced Thermoelectric Properties of Ti 2 FeNiSb 2 Double Half‐Heusler Compound by Sn Doping
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Enhanced Thermoelectric Properties of Ti 2 FeNiSb 2 Double Half‐Heusler Compound by Sn Doping ; day:09 ; month:02 ; year:2022 ; extent:5
Advanced energy & sustainability research ; (09.02.2022) (gesamt 5)
- Urheber
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Hasan, Rahidul
Park, Taegyu
Kim, Sang‐il
Kim, Hyun-Sik
Jo, Seungki
Lee, Kyu Hyoung
- DOI
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10.1002/aesr.202100206
- URN
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urn:nbn:de:101:1-2022020914433179232831
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:36 MESZ
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Beteiligte
- Hasan, Rahidul
- Park, Taegyu
- Kim, Sang‐il
- Kim, Hyun-Sik
- Jo, Seungki
- Lee, Kyu Hyoung
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