InGaN‐Based Whispering Gallery Mode Laser with Lateral Nanoporous Distributed Bragg Reflector Exhibits Superior Mode Selectivity

Abstract: Whispering gallery mode (WGM) laser with single‐mode is important for optoelectronic applications because of the higher stability during the light signal transmission. But till now, for InGaN‐based WGM laser, most reports of lasing behavior are multimode lasing. To achieve single‐mode WGM laser, an InGaN‐based micro‐ring laser is proposed and demonstrated with lateral nanoporous distributed Bragg reflector (DBR), where the high‐order lasing modes are strongly suppressed. The side mode suppression ratio (SMSR) is more than 9 times larger than that of the micro‐disk laser with the same radius. Combined with FDTD simulation, the results show that the enhancements are originated from the suppression of the high‐order resonant mode because of the inner boundary of micro‐ring. This work provides a new solution to achieve stable single‐mode WGM laser for future photonic integration.

Angaben zum Objekt

• Standort: Deutsche Nationalbibliothek Frankfurt am Main
• Umfang: Online-Ressource
• Sprache: Englisch

Verweise und Beziehungen

• Erschienen in: InGaN‐Based Whispering Gallery Mode Laser with Lateral Nanoporous Distributed Bragg Reflector Exhibits Superior Mode Selectivity ; day:26 ; month:02 ; year:2024 ; extent:6 ; Advanced electronic materials ; (26.02.2024) (gesamt 6)

Beteiligte, Orts- und Zeitangaben

• Urheber: Zhao, Lixia ; Chen, Jiawei ; Lin, Shan ; Huang, Yuqing ; Ge, Xiaotian ; Wang, Ting ; Hu, Tiangui ; Ding, Sunan ; Wang, Kaiyou

Weitere Informationen

• DOI: 10.1002/aelm.202300781
• URN: urn:nbn:de:101:1-2024022714163193048825
• Rechteinformation: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
• Letzte Aktualisierung: 14.08.2025, 10:59 MESZ