Temperature and Light-Induced Changes in Bulk and Passivation Quality of Boron-Doped Float-Zone Silicon Coated With SiN<sub>x</sub>:H
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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In: IEEE Journal of Photovoltaics ; 7 (2017), 2. - S. 463-470. - ISSN 2156-3381. - eISSN 2156-3403
- Classification
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Physik
- Event
-
Veröffentlichung
- (where)
-
Konstanz
- (who)
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Bibliothek der Universität Konstanz
- (when)
-
2017
- Creator
- URN
-
urn:nbn:de:bsz:352-2-cn82w3m8z3jy4
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
- 15.08.2025, 7:37 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Sperber, David
- Heilemann, Adrian
- Herguth, Axel
- Hahn, Giso
- Bibliothek der Universität Konstanz
Time of origin
- 2017
Other Objects (12)
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Study on Boron‐Hydrogen Pairs in Bare and Passivated Float‐Zone Silicon Wafers
Concepts and Techniques for the Analysis of Defect Reactions in Crystalline Silicon
Finite Element Simulation of the Local Al/Si Contact Formation
Application of the Concept of Lifetime‐Equivalent Defect Density in Defect Systems Comprising a Multitude of Defect Species
Investigation on the dependence of degradation rate on hole concentration during boron-oxygen related light-induced degradation in crystalline silicon
Investigation on the Long-Term Stability of AlO<sub>x</sub>/SiN<sub>y</sub>:H and SiN<sub>y</sub>:H Passivation Layers During Illuminated Annealing at Elevated Temperatures
Enhanced stability of passivation quality on diffused silicon surfaces under light-induced degradation conditions
Bulk and surface instabilities in boron doped float-zone samples during light induced degradation treatments
Towards a high throughput solution for boron-oxygen related regeneration
A 3-state defect model for light-induced degradation in boron-doped float-zone silicon
Investigating possible causes of light induced degradation in boron-doped Float-Zone silicon
Study on Boron–Hydrogen Pairs in Bare and Passivated Float‐Zone Silicon Wafers
Study on Boron‐Hydrogen Pairs in Bare and Passivated Float‐Zone Silicon Wafers
Concepts and Techniques for the Analysis of Defect Reactions in Crystalline Silicon
Finite Element Simulation of the Local Al/Si Contact Formation
Application of the Concept of Lifetime‐Equivalent Defect Density in Defect Systems Comprising a Multitude of Defect Species
Investigation on the dependence of degradation rate on hole concentration during boron-oxygen related light-induced degradation in crystalline silicon
Investigation on the Long-Term Stability of AlO<sub>x</sub>/SiN<sub>y</sub>:H and SiN<sub>y</sub>:H Passivation Layers During Illuminated Annealing at Elevated Temperatures
Enhanced stability of passivation quality on diffused silicon surfaces under light-induced degradation conditions
Bulk and surface instabilities in boron doped float-zone samples during light induced degradation treatments
Towards a high throughput solution for boron-oxygen related regeneration
A 3-state defect model for light-induced degradation in boron-doped float-zone silicon
Investigating possible causes of light induced degradation in boron-doped Float-Zone silicon
Study on Boron–Hydrogen Pairs in Bare and Passivated Float‐Zone Silicon Wafers
Study on Boron‐Hydrogen Pairs in Bare and Passivated Float‐Zone Silicon Wafers
Concepts and Techniques for the Analysis of Defect Reactions in Crystalline Silicon
Finite Element Simulation of the Local Al/Si Contact Formation
Application of the Concept of Lifetime‐Equivalent Defect Density in Defect Systems Comprising a Multitude of Defect Species
Investigation on the dependence of degradation rate on hole concentration during boron-oxygen related light-induced degradation in crystalline silicon
Investigation on the Long-Term Stability of AlO<sub>x</sub>/SiN<sub>y</sub>:H and SiN<sub>y</sub>:H Passivation Layers During Illuminated Annealing at Elevated Temperatures
Enhanced stability of passivation quality on diffused silicon surfaces under light-induced degradation conditions
Bulk and surface instabilities in boron doped float-zone samples during light induced degradation treatments