Bulk and surface instabilities in boron doped float-zone samples during light induced degradation treatments
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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In: 7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3-5 April 2017, Freiburg, Germany / Preu, Ralf (Hrsg.). - Amsterdam : Elsevier, 2017. - (Energy Procedia ; 124). - S. 794-798. - eISSN 1876-6102
In: 7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3. Apr 2017 - 5. Apr 2017, Freiburg
- Classification
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Physik
- Event
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Veröffentlichung
- (where)
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Konstanz
- (who)
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Bibliothek der Universität Konstanz
- (when)
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2017
- Creator
- URN
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urn:nbn:de:bsz:352-2-z1m8hyzh0bty6
- Rights
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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25.03.2025, 1:44 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Sperber, David
- Graf, Alexander
- Heilemann, Adrian
- Herguth, Axel
- Hahn, Giso
- Bibliothek der Universität Konstanz
Time of origin
- 2017
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Investigation of contact resistivity on a laser doped boron emitter from CVD doping layers
Delay of Regeneration by Adding Aluminum in Boron Doped Crystalline Si
Boron-oxygen related defects in Cz-silicon solar cells degradation, regeneration and beyond
Non-cryogenic infrared absorption spectroscopy for direct boron-hydrogen pair quantification
Status of selective emitter technology
Gettering efficacy of diffusion processes based on doped APCVD glasses
Temperature and Light-Induced Changes in Bulk and Passivation Quality of Boron-Doped Float-Zone Silicon Coated With SiN<sub>x</sub>:H
Quantitative analysis of boron–hydrogen pair dynamics by infrared absorption measurements at room temperature
Influence of the addition of aluminum in boron-doped Cz-Si on degradation and regeneration kinetics
Regeneration of boron-oxygen related degradation in Cz-Si PERC-type solar cells at high temperatures
Investigating possible causes of light induced degradation in boron-doped Float-Zone silicon
A 3-state defect model for light-induced degradation in boron-doped float-zone silicon
Investigation of contact resistivity on a laser doped boron emitter from CVD doping layers
Delay of Regeneration by Adding Aluminum in Boron Doped Crystalline Si
Boron-oxygen related defects in Cz-silicon solar cells degradation, regeneration and beyond
Non-cryogenic infrared absorption spectroscopy for direct boron-hydrogen pair quantification
Status of selective emitter technology
Gettering efficacy of diffusion processes based on doped APCVD glasses
Temperature and Light-Induced Changes in Bulk and Passivation Quality of Boron-Doped Float-Zone Silicon Coated With SiN<sub>x</sub>:H
Quantitative analysis of boron–hydrogen pair dynamics by infrared absorption measurements at room temperature
Influence of the addition of aluminum in boron-doped Cz-Si on degradation and regeneration kinetics