Hochschulschrift

Determination of key device parameters for short- and long-channel Schottky-type carbon nanotube field-effect transistors

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISBN: 9783959081924
3959081928

Dimensions: 21 cm

Extent: xii, 198 Seiten

Language: Englisch

Notes: Illustrationen
Technische Universität Dresden, Dissertation, 2019

Classification: Elektrotechnik, Elektronik

Keyword: CNTFET
Schottky-Kontakt
Kontaktwiderstand
Ladungsträgerbeweglichkeit
Physikalisches Phänomen
Elektrische Eigenschaft
Simulation

Event: Veröffentlichung

(where): Dresden

(who): TUDpress

(when): 2019

Creator: Pacheco-Sánchez, Aníbal Uriel

Table of contents: https://d-nb.info/120450170X/04

Rights: Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.

Last update: 11.03.2025, 12:02 PM CET

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Object type

Hochschulschrift

Associated

Pacheco-Sánchez, Aníbal Uriel
TUDpress

Time of origin

2019

Other Objects (12)

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Determination of key device parameters for short- and long-channel Schottky-type carbon nanotube field-effect transistors

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Frequency dependence of dielectrophoretic fabrication of single-walled carbon nanotube field-effect transistors

Development of Carbon Nanotube-based Field-Effect Transistors for Analog High-Frequency Applications

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Determination of key device parameters for short- and long-channel Schottky-type carbon nanotube field-effect transistors

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Planar Electrostatically Doped Reconfigurable Schottky Barrier FDSOI Field-Effect Transistor Structures

Improvement of carbon nanotube-based field-effect transistors by cleaning and passivation

Integrated Circuits Based on Individual Single-Walled Carbon Nanotube Field-Effect Transistors

Frequency dependence of dielectrophoretic fabrication of single-walled carbon nanotube field-effect transistors

Development of Carbon Nanotube-based Field-Effect Transistors for Analog High-Frequency Applications

Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications

Metal nanoparticle field-effect transistor

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Hochschulschrift

Control over microstructure evolution and device performance in solution processable organic field-effect transistors

Interface engineering in organic field-effect transistors

Hochschulschrift

Determination of key device parameters for short- and long-channel Schottky-type carbon nanotube field-effect transistors

Sub-Linear Current Voltage Characteristics of Schottky-Barrier Field-Effect Transistors

Planar Electrostatically Doped Reconfigurable Schottky Barrier FDSOI Field-Effect Transistor Structures

Improvement of carbon nanotube-based field-effect transistors by cleaning and passivation

Integrated Circuits Based on Individual Single-Walled Carbon Nanotube Field-Effect Transistors

Frequency dependence of dielectrophoretic fabrication of single-walled carbon nanotube field-effect transistors

Development of Carbon Nanotube-based Field-Effect Transistors for Analog High-Frequency Applications

Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications

Metal nanoparticle field-effect transistor

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Hochschulschrift

Control over microstructure evolution and device performance in solution processable organic field-effect transistors

Interface engineering in organic field-effect transistors

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Determination of key device parameters for short- and long-channel Schottky-type carbon nanotube field-effect transistors

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Other Objects (12)

Determination of key device parameters for short- and long-channel Schottky-type carbon nanotube field-effect transistors

Sub-Linear Current Voltage Characteristics of Schottky-Barrier Field-Effect Transistors

Planar Electrostatically Doped Reconfigurable Schottky Barrier FDSOI Field-Effect Transistor Structures

Improvement of carbon nanotube-based field-effect transistors by cleaning and passivation

Integrated Circuits Based on Individual Single-Walled Carbon Nanotube Field-Effect Transistors

Frequency dependence of dielectrophoretic fabrication of single-walled carbon nanotube field-effect transistors

Development of Carbon Nanotube-based Field-Effect Transistors for Analog High-Frequency Applications

Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications

Metal nanoparticle field-effect transistor

Vertical Organic Field-Effect Transistors : On the understanding of a novel device concept

Control over microstructure evolution and device performance in solution processable organic field-effect transistors

Interface engineering in organic field-effect transistors

Determination of key device parameters for short- and long-channel Schottky-type carbon nanotube field-effect transistors

Sub-Linear Current Voltage Characteristics of Schottky-Barrier Field-Effect Transistors

Planar Electrostatically Doped Reconfigurable Schottky Barrier FDSOI Field-Effect Transistor Structures

Improvement of carbon nanotube-based field-effect transistors by cleaning and passivation

Integrated Circuits Based on Individual Single-Walled Carbon Nanotube Field-Effect Transistors

Frequency dependence of dielectrophoretic fabrication of single-walled carbon nanotube field-effect transistors

Development of Carbon Nanotube-based Field-Effect Transistors for Analog High-Frequency Applications

Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications

Metal nanoparticle field-effect transistor

Vertical Organic Field-Effect Transistors : On the understanding of a novel device concept

Control over microstructure evolution and device performance in solution processable organic field-effect transistors

Interface engineering in organic field-effect transistors

Determination of key device parameters for short- and long-channel Schottky-type carbon nanotube field-effect transistors

Sub-Linear Current Voltage Characteristics of Schottky-Barrier Field-Effect Transistors

Planar Electrostatically Doped Reconfigurable Schottky Barrier FDSOI Field-Effect Transistor Structures

Improvement of carbon nanotube-based field-effect transistors by cleaning and passivation

Integrated Circuits Based on Individual Single-Walled Carbon Nanotube Field-Effect Transistors

Frequency dependence of dielectrophoretic fabrication of single-walled carbon nanotube field-effect transistors

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Control over microstructure evolution and device performance in solution processable organic field-effect transistors

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