GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
1556-276X
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications ; volume:8 ; number:1 ; day:8 ; month:5 ; year:2013 ; pages:1-6 ; date:12.2013
Nanoscale research letters ; 8, Heft 1 (8.5.2013), 1-6, 12.2013

Creator
Li, Jie
Guo, Hao
Liu, Jun
Tang, Jun
Ni, Haiqiao
Shi, Yunbo
Xue, Chenyang
Niu, Zhichuan
Zhang, Wendong
Li, Mifeng
Yu, Ying
Contributor
SpringerLink (Online service)

DOI
10.1186/1556-276X-8-218
URN
urn:nbn:de:101:1-2019062921004437473014
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:44 AM CEST

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Associated

  • Li, Jie
  • Guo, Hao
  • Liu, Jun
  • Tang, Jun
  • Ni, Haiqiao
  • Shi, Yunbo
  • Xue, Chenyang
  • Niu, Zhichuan
  • Zhang, Wendong
  • Li, Mifeng
  • Yu, Ying
  • SpringerLink (Online service)

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