GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications ; volume:8 ; number:1 ; day:8 ; month:5 ; year:2013 ; pages:1-6 ; date:12.2013
Nanoscale research letters ; 8, Heft 1 (8.5.2013), 1-6, 12.2013
- Creator
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Li, Jie
Guo, Hao
Liu, Jun
Tang, Jun
Ni, Haiqiao
Shi, Yunbo
Xue, Chenyang
Niu, Zhichuan
Zhang, Wendong
Li, Mifeng
Yu, Ying
- Contributor
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SpringerLink (Online service)
- DOI
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10.1186/1556-276X-8-218
- URN
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urn:nbn:de:101:1-2019062921004437473014
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:44 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Li, Jie
- Guo, Hao
- Liu, Jun
- Tang, Jun
- Ni, Haiqiao
- Shi, Yunbo
- Xue, Chenyang
- Niu, Zhichuan
- Zhang, Wendong
- Li, Mifeng
- Yu, Ying
- SpringerLink (Online service)